Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal-organic compound layer contained mask for near-field super resolution photomemory

An organic compound and super-resolution technology, which is applied in the field of optical storage, can solve the problem of reducing the light spot and achieve the effect of reducing the light spot, small thermal damage, and strong near-field optical signal

Inactive Publication Date: 2004-11-17
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem to be solved by the present invention is to effectively improve the difficulties of the above-mentioned prior art, and provide a mask for near-field super-resolution optical storage containing a metal-organic compound layer, relying on a focused laser exceeding a certain power density threshold on the mask material The generated photon effect effectively narrows the spot, and can photo-generate nano-metal particles (or clusters) to achieve surface plasmon enhancement of near-field optical signals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal-organic compound layer contained mask for near-field super resolution photomemory
  • Metal-organic compound layer contained mask for near-field super resolution photomemory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] On a clean and transparent glass substrate 6 with a thickness of 0.6mm, vacuum evaporation method (vacuum degree 2.7×10 -3 Pa), plated successively on the substrate: protective layer 1, metal-organic compound layer 2 and protective layer 3 as a mask, wherein protective layer 1 and protective layer 3 are zinc sulfide with a thickness of 20nm, and metal-organic compound layer 2 is Silver tetracyanoquinone dimethane with a thickness of 10 nm.

[0019] When the power density exceeds 1.3×10 3 W / cm 2 When a focused laser with a wavelength of 514.5nm acts on the metal organic compound layer 2 in the mask 4, the transmittance of the central region of the action increases by more than 30% at a wavelength of 514.5nm, and irregularly distributed sizes of 50- 150nm nano-silver particles can play a role of super-resolution near-field enhancement.

Embodiment 2

[0021] On a clean and transparent glass substrate 6 with a thickness of 0.6mm, vacuum evaporation method (vacuum degree 2.7×10 -3 Pa), plated successively on the substrate: protective layer 1, metal-organic compound layer 2 and protective layer 3 as a mask, wherein protective layer 1 and protective layer 3 are zinc sulfide with a thickness of 20nm, and the metal-organic compound layer 2 has a thickness of 40nm silver tetracyanoquinone dimethane.

[0022] When the power density exceeds 1.3×10 3 W / cm 2 When a focused laser with a wavelength of 514.5nm acts on the metal-organic compound layer 2 in the mask 4, the transmittance of the central region of the action increases by more than 50% at a wavelength of 514.5nm, and irregularly distributed sizes of 50- 150nm nano-silver particles can play a role of super-resolution near-field enhancement.

Embodiment 3

[0024] On a clean and transparent glass substrate 6 with a thickness of 0.6mm, the vacuum evaporation method is used to sequentially plate on the substrate: protective layer 1, metal organic compound layer 2 and protective layer 3 as a mask, wherein protective layer 1 and protective layer 3 are zinc sulfide with a thickness of 20nm, and the metal-organic compound layer 2 is copper tetracyanoquinodimethane with a thickness of 10nm. The structural mask 4 can play the role of super-resolution near-field enhancement.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention is a kind of mask applied to the near field super-resolution optical storage which contains a metal organic compound layer. It includes a protection layer, a metal organic compound layer and a protection layer in order, the character lies in: the protection layer is made up of silicon nitride, or zinc sulfide, or the compound material of the zinc sulfide and the silicon dioxide; the metal organic compound layer is made up of four-cyano-group para-quinone dimethane silver, or four-cyano-group para-quinone dimethane copper, or four-cyano-group para-quinone dimethane aluminum, four-cyano-group para-quinone dimethane platinum, or four-cyano-group para-quinone dimethane gold. The reacting time is quick, the damage to the recording media and the base slice is small, and the near field light signal is stronge.

Description

Technical field: [0001] The invention belongs to the technical field of optical storage, and relates to a mask for near-field super-resolution optical storage containing a metal organic compound layer. Background technique: [0002] Optical data storage devices represented by optical discs have become an indispensable information carrier in the contemporary information society, and have been widely used in the storage of data and moving images. With the development and popularization of high-definition digital TV, digital cameras, video recorders, digital movies, and massive network and satellite data downloads, optical storage with higher storage density is required. The current various optical disk drives (such as CD and DVD drives), whose objective lens is far (millimeter level) from the recording medium, belong to far-field optical storage. Due to the diffraction effect, the diameter of the recording spot at the focal point is proportional to the recording laser wavelen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G11B7/254G11B11/24
Inventor 王阳顾冬红徐文东魏劲松张锋
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com