Method for preparing nano zinc oxide film of high ultraviolet absorption

A nano-zinc oxide, external absorption technology, applied in liquid chemical plating, metal material coating process, coating and other directions, to achieve the effect of low reaction temperature, strong absorption, and uniform distribution

Inactive Publication Date: 2005-01-12
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But at present, this method is mainly used for the preparation of zinc oxide nanoparticles or powder. For the preparation of thin film materials, it mainly focuses on the preparation method of electrochemical deposition, while the simple solution deposition method and solvothermal method are rarely reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nano zinc oxide film of high ultraviolet absorption
  • Method for preparing nano zinc oxide film of high ultraviolet absorption
  • Method for preparing nano zinc oxide film of high ultraviolet absorption

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] ①Preparation of reaction solution: Dissolve 0.0005mol of zinc nitrate and 0.0005mol of hexamethylenetetraammonia in 100ml of methanol solution, stir until the solution is clear, and prepare a reaction solution for zinc oxide film growth.

[0030] ②Immerse a quartz plate with a length of 40mm, a width of 12mm, and a thickness of 2mm into boiling concentrated sulfuric acid, soak it for 10 hours, then immerse it in acetone solution, ultrasonicate it for 30 minutes, rinse it with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0031] ③ Synthesis of nano-zinc oxide film: Pour the above-mentioned growth reaction solution of zinc oxide nanocrystals prepared according to ① into the tetrafluoroethylene reactor, and soak the quartz substrate treated according to step ② into the film growth reaction prepared above. In the solution for 30 minutes, close the reactor, heat up to 100 ° C, react for 2 hours, naturally cool to room temperature after the r...

Embodiment 2

[0034] ① Preparation of reaction solution: Dissolve 0.00075mol of zinc nitrate and 0.00075mol of hexamethylenetetraammonia in 100ml of methanol solution, stir until the solution is clear, and prepare a reaction solution for zinc oxide film growth.

[0035] ②Immerse a quartz plate with a length of 40mm, a width of 12mm, and a thickness of 2mm into boiling concentrated sulfuric acid, soak for 8 hours, then immerse in acetone solution, ultrasonicate for 45 minutes, rinse with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0036] ③ Synthesis of nano-zinc oxide film: Pour the above-mentioned growth reaction solution of zinc oxide nanocrystals prepared according to ① into the tetrafluoroethylene reactor, and soak the quartz substrate treated according to step ② into the film growth reaction prepared above. In the solution for 45 minutes, close the reactor, raise the temperature to 100°C, and react for 2.5 hours. After the reaction, it is naturally co...

Embodiment 3

[0038]①Preparation of reaction solution: Dissolve 0.0005mol of zinc nitrate and 0.0005mol of hexamethylenetetraammonia in 100ml of methanol solution, stir until the solution is clear, and prepare a reaction solution for zinc oxide film growth.

[0039] ②Immerse a quartz plate with a length of 40mm, a width of 12mm, and a thickness of 2mm into boiling concentrated sulfuric acid, soak for 5 hours, then immerse in acetone solution, ultrasonicate for 60 minutes, rinse with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0040] ③ Synthesis of nano-zinc oxide film: Pour the above-mentioned growth reaction solution of zinc oxide nanocrystals prepared according to ① into the tetrafluoroethylene reactor, and soak the quartz substrate treated according to step ② into the film growth reaction prepared above. In the solution for 60 minutes, close the reactor, raise the temperature to 95°C, and react for 3 hours. After the reaction, naturally cool to room te...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

A preparation method for a strong uv-absorption nm ZnO film is to dissolve ZNH and six sub-methyl tetramine in the mole concentration proportion of 1:1 in methyl alcohol solution to prepare a film growing reaction solution, then a preprocessed baseplate is immersed into a prepared film grown reaction solution for 30-60min again to rise to 95-100deg.C reacted for 2-3h to get a densed ZnO film.

Description

technical field [0001] The invention belongs to a preparation method of an inorganic thin film, and relates to a preparation method of a nanometer zinc oxide thin film with strong ultraviolet light absorption and good visible light transmittance. It specifically relates to the preparation of nanometer zinc oxide film by chemical solution method. Background technique [0002] Zinc oxide thin film is a good semiconductor material. It has good photoelectric function due to its large energy gap width (similar to gallium nitride), so it can be used in gas-sensitive materials, light-emitting materials, photoelectric conversion materials, piezoelectric materials It can be used as transparent conductors, light-emitting elements, solar cell windows, optical waveguides, monochromatic field emission displays, high-frequency piezoelectric transducers, micro-sensor bulk acoustic wave materials and raw surface wave materials. Thin film resonators, filters, etc. In the past, there were f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/12
Inventor 王卓钱雪峰朱子康印杰
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap