Multiple array copper-manganese thin film super high pressure transducer and method for making same

A technology of ultra-high pressure and sensors, which is applied to the measurement of the properties and forces of piezoelectric resistance materials, etc., can solve the problems of high test costs, insulation performance degradation, sensor signal attenuation, etc., to eliminate high-voltage bypass effects and improve measurement accuracy The effect of improving and improving precision

Inactive Publication Date: 2005-03-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Description
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AI Technical Summary

Problems solved by technology

When measuring the pressure of a large-area shock wave, it is necessary to perform multiple measurements to find the average pressure value; or use multiple pressure sensors to measure at the same time, and the measurement accuracy and accuracy of the pressure sensor are very low
Since the pressure test equipment uses a two-stage hydrogen cannon, the test cost is high
Therefore, it is not ideal to use existing sensors to measure and calculate pressure multiple times
[0005] In add

Method used

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  • Multiple array copper-manganese thin film super high pressure transducer and method for making same
  • Multiple array copper-manganese thin film super high pressure transducer and method for making same
  • Multiple array copper-manganese thin film super high pressure transducer and method for making same

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Embodiment Construction

[0022] Arrayed manganese-copper thin-film ultra-high pressure sensor composed of four pressure-sensitive elements manganin-copper thin-film 2

[0023] Prepared using the following steps:

[0024] 1. At first on the silicon dioxide substrate 1, deposit the manganese-copper film and the copper electrode successively with the method of magnetron sputtering;

[0025] 2. Etching by photolithography according to the array structure: 4 manganese-copper thin films 2 of pressure sensitive elements and 4×4 copper electrodes 3,

[0026] Four pressure-sensitive element manganese-copper films 2 are symmetrically and evenly distributed, and each pressure-sensitive element manganese-copper film 2 is connected to four electrodes 3; each pressure-sensitive element manganese-copper film 2 has a size of 5×1 mm and a thickness of 1-5 μm; copper electrodes 3 leads are fan-shaped, such as figure 2 As shown, the thickness is 2-8 μm;

[0027] 3. Then use the electron beam evaporation method to co...

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Abstract

This invention provides an array copper-manganese thin film super-high pressure sensor and its process method and its characters are that it comprises N pressure sensitive parts of array structure and thin film copper-manganese 2 and inorganic material sealed film 4 and the sensor adopts all thin film process. The sensor in this invention eliminates seal material high pressure sideway effect, which can make the sensor measurement accuracy at three to five percents and respond time reduces to twenty to forty ns. The sensor in this invention is mainly used to measure strong impact wave pressure such as in the measurement of armor or nuclear weapon explode impact wave pressure.

Description

technical field [0001] The invention belongs to the technical field of electronic components, and in particular relates to an ultra-high pressure sensor. Background technique [0002] The ultra-high pressure sensor measures the pressure by using the piezoresistive effect of the pressure-sensitive material (a relationship in which the resistance of the material changes with the pressure). Commonly used pressure sensitive materials are manganin materials. [0003] Manganese copper is a conventional ternary alloy material, the main components are 10-15% manganese, 0-4% nickel, and the rest is copper. Since the discovery of the piezoresistive effect at the beginning of last century, this material has been widely used in the measurement of static pressure. In the 1960s, it was introduced into the dynamic pressure test (Fuller P J A and Price J H. Electrical conductivity of manganin and iron at high pressures. Nature, 1962; 193(1): 262~263. Berstein D and Keough D D. Piezoresis...

Claims

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Application Information

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IPC IPC(8): G01L1/18
Inventor 杨邦朝段建华杜晓松周鸿仁崔红玲徐蓓娜
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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