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Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method

A micro-electromechanical, single-pole double-throw technology, applied in the direction of circuits, relays, electrical components, etc., can solve the problems of high-frequency signal interference, large loss of coplanar waveguide, high threshold voltage, etc., to achieve low insertion loss, high isolation, The effect of small power loss

Inactive Publication Date: 2005-03-30
SOUTHEAST UNIV
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Technical problem: The purpose of the present invention is to provide a radio frequency micro-electromechanical single-pole double-throw film switch and its manufacturing method. The application of this structure can solve and alleviate the high threshold voltage of the MEMS switch, the interference of the DC control voltage to the high-frequency signal, and the common The problem of large loss in the surface waveguide, and the many advantages of the single-pole single-throw film switch can be used to realize the single-pole double-throw function

Method used

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  • Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method
  • Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method
  • Single-pole double throw membrane switch of RF microelectronic machinery and its mfg method

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Embodiment Construction

[0037] For the radio frequency micro-electro-mechanical single-pole double-throw membrane switch structure of the present invention, we have designed a complete implementation scheme, and have obtained better characteristics through experimental verification and testing. The structural scheme of this radio frequency microelectromechanical single-pole double-throw membrane switch is as follows:

[0038]There is a microwave T-shaped head 11 composed of a microstrip line in the radio frequency microelectronic mechanical single-pole double-throw membrane switch of the present invention, which includes a signal line 111 used as a high-frequency signal input end and two connected to it to form a symmetrical T-shaped The branch signal lines 112 and 113 of the structure, each branch signal line has a single-pole single-throw membrane switch 10 symmetrically connected thereto. A control circuit is used to control the DC drive electrodes of the two single-pole single-throw switches to t...

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Abstract

In each single-pole double-throw membrane switch, there is a microwave T type head composed of microstrip lines including one signal line as input end of high frequency signal, and two connected offset signal lines in symmetrical T shape structure. A same single-pole single-throw membrane switch is connected to each offset signal line. In microwave T type head, total of effective length b of each offset signal line and length a from offset signal line to middle point of coplane wave-guide signal line is equal to 1 / 4 wavelength of input high frequency signal. Control circuit controls on / off of two sets of single-pole single-throw to realize function of single-pole double-throw. Comparing with MEMS membrane switch, the invention solves high threshold voltage and interference of control voltage on transmission signal. Advantages are: low threshold voltage, isolation and insertion loss, and high reliability, and repeatability.

Description

technical field [0001] The invention relates to a single-pole double-throw membrane switch of a radio frequency microelectronic system and a manufacturing method thereof, belonging to the technical field of microelectromechanical systems (MEMS). Background technique [0002] Compared with traditional semiconductor switches such as FET and PIN diode switches, MEMS membrane switches have many advantages due to the elimination of metal-semiconductor junctions and PN junctions in structure, for example: contact resistance and diffusion resistance in ohmic contacts are eliminated, so It greatly reduces the resistance loss of the device; it has an extremely low third-order intermodulation product, thereby significantly reducing the harmonic and intermodulation components of the switch, and the linearity is very good; it has a high switch capacitance ratio, usually In terms of size, the on / off capacitance ratio of the MEMS switch is about 20-100; the elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01H59/00
Inventor 廖小平严捷
Owner SOUTHEAST UNIV
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