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Preparation method of optically homogeneous zirconia film

A zirconia and thin film technology, which is applied in the field of preparation of optically uniform zirconia thin films, can solve problems such as optical non-uniformity, and achieve the effects of wide application range, high adhesion, and elimination of factors of optical non-uniformity.

Inactive Publication Date: 2005-04-06
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the difficult problem of optical inhomogeneity in the deposition and preparation of zirconia thin films, and to provide a method for preparing optically uniform zirconia thin films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The purpose of this example is to prepare an optically uniform zirconia film, and the refractive index of the sample at 600 nm is required to be between 1.91-1.95.

[0036] The specific preparation method of this example is: at room temperature, using ion beam auxiliary technology, the ion source is a domestic Hall-type auxiliary ion source, the equipment is a ZZSX800F coating machine, the distance between the ion source ion outlet and the fixture for placing the sample in the vacuum chamber is 40cm; Put the zirconia block into the crucible as the target; put the substrate cleaned by petroleum ether on the fixture, pump the vacuum to 3×10-3Pa, and turn on the ion source. The working gas of the ion source is high-purity oxygen with a concentration of 99.99%. , the gas flow rate is 16sccm; the average energy of the ion is selected as 100eV, and the beam density of the ion is selected as 160 microamperes / cm2. After the ion source works stably, the operation of the electron ...

Embodiment 2

[0038] The purpose of this example is to prepare an optically uniform zirconia film, and the refractive index of the sample at 500 nm is required to be between 1.95-1.97.

[0039] The preparation method of this embodiment is: at room temperature, using ion beam auxiliary technology, the ion source is a domestic Hall-type auxiliary ion source, the equipment is a ZZSX800F coating machine, and the distance between the ion source ion outlet and the clamp for placing the sample in the vacuum chamber is 40cm; Put the zirconia block into the crucible as the target; put the substrate cleaned by petroleum ether on the fixture, pump the vacuum to 3×10-3Pa, and turn on the ion source. The working gas of the ion source is high-purity oxygen with a concentration of 99.99%. , the gas flow rate is 16sccm; the average energy of the ion is selected as 180eV, and the beam density of the ion is selected as 160 microamperes / cm2. After the ion source works stably, the operation of the electron gun ...

Embodiment 3

[0041] The purpose of this example is to prepare an optically uniform zirconia film, and the refractive index of the sample at 500 nm is required to be between 1.95-1.97.

[0042]The preparation method of this embodiment is: at room temperature, using ion beam auxiliary technology, the ion source is a domestic Hall-type auxiliary ion source, the equipment is a ZZSX800F coating machine, the distance between the ion source ion outlet and the fixture for placing the sample in the vacuum chamber is 40cm; Put the zirconium block into the crucible as the target; put the substrate cleaned by petroleum ether on the fixture, pump the vacuum to 3×10-3Pa, and turn on the ion source. The working gas of the ion source is high-purity oxygen with a concentration of 99.99%. The gas flow rate is 16sccm; the average energy of the ions is selected as 100eV, and the beam density of the ions is selected as 120 microamperes / cm2. After the ion source works stably, the operation of the electron gun is...

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PUM

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Abstract

It is an optics even zirconia thin film process method, which has the keys as following: to adopt vacuum electron gun evaporation deposition from; to select Hall accessory ion source; not to exert bacon to the base plate; the detail parameters of the said ion source is identified according to the needed refractive index and non-crystallization of the thin film.

Description

Technical field: [0001] The invention relates to optical thin films, in particular to a method for preparing an optically uniform zirconia thin film. technical background: [0002] Zirconium oxide is one of the most commonly used optical thin film materials. Due to its transparency, good mechanical stability and chemical stability in a wide spectral range, it is often used together with some low refractive index materials such as silicon oxide. , according to the requirements to design optical multilayer films that meet various requirements. [0003] The preparation of optical zirconia thin films generally adopts physical vacuum deposition, and in physical vacuum deposition methods such as thermal evaporation, sputtering deposition, ion plating, etc., the method of preparing zirconia thin films by electron gun thermal evaporation physical vacuum deposition is the most popular and popular, because The method has the advantages of fast deposition speed and good mechanical sta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/10G02B1/12
Inventor 张大伟邵建达范正修王英剑黄建兵张东平尚淑珍
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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