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Thermal electron reinforced ionic boronizing device and process

A hot electron and ion infiltration technology, applied in the field of ion boronizing, to achieve the effect of expanding the working pressure range, increasing the infiltration speed, and strong operability

Inactive Publication Date: 2005-06-29
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention is essentially different from the above two patents. In US Patent 452O268 and Chinese Patent 87104358.0, only metal elements are sputtered and infiltrated, and non-metallic element boron is not involved.

Method used

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  • Thermal electron reinforced ionic boronizing device and process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0020] As shown in the attached picture. Place a steel workpiece 3 with a size of 40mm×20mm (diameter×height) on a steel cathode tray 2 with a size of 80mm (diameter), and hang 6 pieces of steel with a size of 25mm×15mm×5mm (length×width×thickness) around it. The source electrode 4 of the iron-boron strip ensures that the distance between the iron-boron strips and between the iron-boron strip and the workpiece is 10cm-25cm. Vacuum up to 10 -1 After Pa, fill in argon gas to 50Pa, apply a voltage of -500V between the workpiece 3 and the vacuum container 5, and apply a voltage of -1000V between the workpiece 3 and the vacuum container 5, and apply a voltage of -1000V between the iron boron source electrode 4 and the vacuum container 5, and wait for the temperature of the workpiece to rise to 850°C. Keep warm for 2 hours, drop to room temperature, take out the sample out of the oven. The thickness of the boronizing layer on the surface of 45 steel workpiece is 0.03mm, and the su...

Embodiment approach 2

[0022] Furnace loading is the same as embodiment 1. The workpiece 3 is made of Ti6Al4V alloy, and the source 4 is made of boron iron. Vacuum up to 10 -1 After Pa, fill in argon gas to 50Pa, apply a voltage of -400V between the workpiece 3 and the vacuum container 5, and apply a voltage of -800V between the iron boron source 4 and the vacuum container 5, ignite the thermionic emission device, and reduce The pressure in the furnace is reduced to 3Pa, when the temperature of the workpiece is raised to 800°C, keep it warm for 2 hours, then drop to room temperature, and take out the sample from the furnace. The thickness of boron-iron co-infiltration layer on the surface of Ti6Al4V alloy workpiece is 0.01mm, and the surface hardness reaches 1100HV.

Embodiment approach 3

[0024] Furnace loading is the same as embodiment 1. The workpiece 3 is made of 20 steel, and the source 4 is made of boron nickel. Vacuum up to 10 -1 After Pa, fill in argon gas to 50Pa, apply a voltage of -600V between the workpiece 3 and the vacuum container 5, and apply a voltage of -1200V between the iron boron source electrode 4 and the vacuum container 5, ignite the thermionic emission device, and reduce The pressure in the furnace is reduced to 3Pa. When the temperature of the workpiece is raised to 950°C, the temperature is kept for 2 hours, and then it is lowered to room temperature, and the sample is taken out of the furnace. The thickness of the boron-iron co-infiltration layer on the surface of 20 steel workpiece is 0.04mm, and the surface hardness reaches 1000HV.

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Abstract

A thermal electron enhanced ion boronizing device and process, belonging to the category of metal material surface chemical heat treatment technology, is to use the hollow cathode effect and thermionic emission effect on the surface of ferrous metals and nonferrous metals to perform ion boronizing and boron-metal Co-infiltration techniques and devices. An ion boronizing device and method using solid metal boride as a boron supply source are provided. The hollow cathode effect and thermionic emission effect enhance the infiltration and controllability of boron. Boron-iron, boron-titanium, boron-chromium, boron-nickel, etc. are used as boride source materials to realize boronizing and boron-titanium, boron-chromium, boron-nickel co-infiltration. It is a glow discharge technology and device with convenient, fast, pollution-free, fast infiltration speed, uniform infiltration layer, controllable composition, simple equipment, low cost, and no hydrogen boronizing for the formation of boron atoms.

Description

[0001] 1. Technology area [0002] The thermal electron enhanced ion boronizing device and process of the present invention belong to the category of metal material surface chemical heat treatment process technology. Specifically, it is a technology and device for ion boronizing on the surface of a conductive material by using the hollow cathode effect and thermionic emission effect. The invention provides an ion boronizing device and method using solid boride as a supply source. 2. Background technology [0003] Existing boronizing methods, such as solid boronizing, liquid boronizing, gas boronizing, paste boronizing, electrolytic boronizing, vacuum boronizing and gas ion boronizing methods, all have different shortcomings. Solid, liquid, and gas boronizing have slow speed, poor controllability of composition, and pollute the environment. Paste boronizing has poor working conditions, poor controllability, high labor intensity and long processing time. Vacuum boronizing and...

Claims

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Application Information

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IPC IPC(8): C23C8/68
Inventor 秦林李咏梅范爱兰唐宾
Owner TAIYUAN UNIV OF TECH
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