Plasma processing technique for reducing MOCVD TiN film thickness on through-hole side wall

Abstract

This invention belongs to integration circuit process technique field, which in detail is a plasm process to decrease the MOCVD TiN film thickness of the hole sidewall. The current process, the Tin film on the inner sidewall of holes cannot be processed with its thickness of ten percent only to make the resistance increase when in plasm gas process.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit chip manufacturing, and specifically relates to a post-treatment process for reducing the thickness of a TiN film on the side wall of a through hole and removing impurities such as C and O in the TiN film, so as to reduce the resistance of the through hole and reduce the RC delay. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the main factor restricting the speed of the circuit has changed from the gate delay (gated delay) to the RC delay caused by the resistance (R) of the connection and the capacitance (C) between the connections, thus reducing RC delay is an urgent and important work. [0003] In the current aluminum metal interconnection technology, the aluminum lines are formed by etching, and the aluminum lines of adjacent layers are connected by tungsten in the through holes. And a continuous and complete TiN barrier la...

AI Technical Summary

Problems solved by technology

A process problem with existing MOCVD techniques is that during the plasma gas treatment step, the TN barrier layer on the inner sidewall of the hole is barely treated, and its thickness accounts for ~10% of the hole diameter, causing CD loss, interconnect resistance raised

Compared with PVD TiN film, the disadvantage of MOCVD TiN is that the film contains higher impurities such as C and O, which cause the via resistance to be 10~15% higher than that of PVD TiN.

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