Method for making organic LED

A technology of light-emitting diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., and can solve problems such as low device efficiency, difficulty in adjusting the light-emitting color of devices, and limiting the application range of organic light-emitting diodes.

Inactive Publication Date: 2005-06-29
TRULY SEMICON
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve luminous efficiency, the current common practice is that the luminescent layer is mixed and deposited by a main luminous body (referred to as host H) doped with a small amount of luminous body (referred to as guest D). The emission spectrum of the device determines the color of the device. It is difficult to adjust the emission color of the device. Even if it

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for making organic LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] Select an ITO glass substrate with a thickness of 200 mm × 200 mm × 0.7 mm for cleaning to remove impurities on the substrate. And use photolithography technology to make the required lattice pattern, including photolithography auxiliary metal electrode, photolithography transparent electrode ITO, photolithography insulating layer, photolithography cathode isolation column layer.

[0012] In the dedicated OLED coating equipment, first use O 2 Plasma or ultraviolet light ozone activates the ITO surface, and then in a high vacuum (vacuum degree above 1×10-4 Pa) cavity, use physical vapor deposition method to thermally evaporate organic materials, first deposit 60 nanometers thick hole transport material (Sometimes the hole transport layer is divided into two layers, i.e., the hole injection layer and the hole transport layer), and then the light-emitting layer is deposited, using the mixed deposition method, the host H is doped with two or more than two kinds of guest D, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention discloses an organic light diode process method, which comprises the following steps: first to clear ITO glass base plate and use etching technique to process lattice pattern; second to deposit organic function layer and electrode in high vacuum conditions; third to do the oxygen and water proof seal process to the deposited thin film device, wherein in step two to join two or more than two kinds of electric light spectrum different visible light band object light material into the light layer visible wave band.

Description

technical field [0001] The invention relates to a manufacturing method of an organic light emitting diode (OLED). Background technique [0002] Organic Light-Emitting Diode (OLED for short) is a new type of flat-panel display at present, because it has many advantages such as active light emission, high contrast, can be thinned, and fast response speed, it is recognized as the main force of the next-generation display. The light-emitting principle of the organic light-emitting diode (OLED) is to evaporate a very thin multi-layer organic material between two electrodes, and to drive it with direct current to emit light. The organic functional layer of the organic light-emitting diode (OLED) generally consists of three layers, namely a hole transport layer, a light-emitting layer, and an electron transport layer. The color of the device is mainly determined by the light-emitting layer. In order to improve luminous efficiency, the current common practice is that the luminesce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/40
Inventor 曹绪文苏初榜
Owner TRULY SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products