System for depositing a film onto a substrate using a low vapor pressure gas precursor
A technology for depositing films, precursors, applied in nanotechnology, transistors, electrical components, etc. for materials and surface science, which can solve the problem of difficult to achieve high capacitance or low leakage current, high operating pressure, and difficult flow control, etc. question
Inactive Publication Date: 2005-08-31
MATTSON TECHNOLOGY
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Problems solved by technology
[0004] The problem with many conventional films is that it is difficult to achieve the high capacitance or low leakage current required for new advanced applications such as memory cells, microprocessor logic gates, mobile phones and PDAs
However, since MOCVD precursors are usually delivered with the carrier gas using heated diffusers, control of the precursor flow is also often difficult with this technique
Another drawback of conventional MOCVD is that the operating pressure is usually high, which may lead to potential complexation reactions with contaminants from the reactor surface
Also, if the deposition rate is too high, impurities such as carbon from the reactor or precursors may become incorporated within the film
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[0025] Fig. 2 is according to one embodiment of the present invention, adopts the flow rate and the time period distribution illustration of two reaction cycles when adopting precursor-purge-oxidizer-purge (A-B-C-D) sequence to deposit an oxide film;
[0026] Figure 3 is one embodiment of a system that can be used in the present invention;
[0027] Figure 4 is an exemplary illustration of the relationship between deposition thickness and deposition temperature in a non-ALD cyclic process and an ALD process;
[0028] Figure 5 is a back pressure model result when a hafnium(IV) tert-butoxide flow rate of 1 standard cubic centimeter per minute is used according to one embodiment of the present invention;
[0029] Fig. 6 is the vapor pressure curve of hafnium (IV) tert-butoxide, wherein the gas vapor pressure is 1 torr at 60°C and 0.3 torr at 41°C;
[0030] Figure 7 is where the vapor pressure of the gas is 1 Torr at 172°C and 0.3 Torr at 152°C, HfCl 4 The vapor pressure curve;
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Abstract
A method for depositing a film on a substrate (35) is provided. The substrate (35) is contained within a reactor vessel (1) at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate (35) to a reaction cycle comprising i) supplying to the reactor vessel (1) a gas precursor at a temperature of from about 20 DEG C to about 150 DEG C and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organometallic compound; and ii) supplying to the reactor vessel (1) a purge gas, an oxidizing gas, or combinations thereof.
Description
[0001] related application [0002] This application claims priority to Provisional Application No. 60 / 374,218, filed April 19,2002. Background of the invention [0003] To form advanced semiconductor devices such as microprocessors and DRAMs (Dynamic Random Access Memory), it is often necessary to form thin films on silicon wafers or other substrates. Various techniques commonly used to deposit thin films onto substrates include PVD ("Physical Vapor Deposition" or "Sputtering") and CVD ("Chemical Vapor Deposition"). Several CVD methods are commonly used, including APCVD ("atmospheric pressure CVD"), PECVD ("plasma enhanced CVD") and LPCVD ("low pressure CVD"). LPCVD is generally a heat-activated chemical process (unlike plasma-activated PECVD) and generally includes the subclasses MOCVD ("metal organic CVD") and ALD ("atomic layer deposition"). [0004] A problem with many conventional films is that it is difficult to achieve the high capacitance or low leakage current requ...
Claims
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IPC IPC(8): C23C16/448C23C16/40C23C16/44C23C16/455H01L21/316H01L21/8242H01L27/108
CPCC23C16/45544C23C16/45553C23C16/40C23C16/45565C23C16/466C23C16/4411C23C16/405C23C16/45536B82Y30/00C23C16/18
Inventor S·C·塞尔布雷德M·朱克V·文图罗
Owner MATTSON TECHNOLOGY