Nano-line silicone carbide metal oxide semiconductor field effect transistor
A technology of oxide semiconductors and field effect transistors, applied in the field of manufacturing new power semiconductor devices, to achieve the effects of not easy heat accumulation, high pressure and high temperature resistance, and reduced manufacturing costs
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Embodiment 1
[0010] Example 1. Fabrication of a single nanowire silicon carbide metal oxide semiconductor field effect transistor.
[0011] An example of the present invention is to use nanowire silicon carbide with a diameter of 10nm and a length of 70nm to manufacture a single nanowire silicon carbide metal oxide semiconductor field effect transistor. The nanowire silicon carbide material is silicon carbide nanowire doped with nitrogen, which is separated into a single nanowire state by a dispersion liquid and laid on a semi-insulating substrate of a silicon carbide wafer. A photolithography plate containing two electrodes with a patterned structure of external leads is used. The electrode spacing is 15 nm. Coating photoresist, exposing with ultraviolet light, and then evaporating metal electrodes in a thermal resistance vacuum furnace, the electrode material is palladium metal, forming two source electrodes and drain electrodes. After the electrodes are wired, a silicon oxide film is ...
Embodiment 2
[0012] Example 2 Multi-nanowire silicon carbide metal oxide semiconductor field effect transistor.
[0013] Nitrogen-doped nanowire silicon carbide is arranged in parallel on a silicon carbide wafer semi-insulating substrate. Construction of a Multi-Nanowire Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor. That is, the metal oxide semiconductor field effect transistor unit contains more than two silicon carbide nanowires. According to the process of Example 1, the multi-nanowire silicon carbide metal oxide semiconductor field effect transistor was constructed. In this example, there are 73 silicon carbide nanowires in the metal oxide semiconductor field effect transistor unit. Device performance: normal operation at a temperature of 600°C. The blocking resistance is 6000V, and the on-state specific resistance is 13μΩcm 2 .
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