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Ferroelectric memory

A technology of ferroelectric memory and capacitor unit, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve the problems of reading and writing action constraints

Inactive Publication Date: 2006-03-15
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in FeRAM whose refinement is constantly improving, there is a problem that it is necessary to provide more than three wiring layers, at least up to M1-M3
Therefore, it is necessary to use the word lines on both sides of the plate line as word lines of different rows, or to select the word lines on both sides of the plate line in shifts one by one, and read out the signal, so that, compared with ordinary FeRAM, the read The movement of output and writing is greatly restricted

Method used

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  • Ferroelectric memory
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Examples

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no. 1 example

[0040] figure 1 It is a plan view of a configuration example of the FeRAM 100 according to the first embodiment of the present invention. Such as figure 1 As shown, the FeRAM 100 is a stacked ferroelectric memory, comprising: a plurality of capacitor units 110; a plurality of word lines 161, 162; a plurality of cell selection MOS transistors using these word lines 161 or 162 as gate electrodes (hereinafter, only referred to as transistors) 170; a plurality of word support wiring (M1) 140; a plurality of plate lines (M1) 120; a plurality of wiring pads (M1) 150;

[0041] For the convenience of explanation, figure 2 A schematic diagram of the FeRAM 100 with the bit lines removed is shown. Such as figure 2 As shown, a plurality of word lines 161 and 162 are alternately arranged along the column direction. And, for example figure 2 A pair of word lines 161 and 162 adjacent to each other in the column direction has a structure (folded structure) in which one line is bent...

no. 3 example

[0061] Figure 4 It is a plan view of a configuration example of the FeRAM 300 according to the third embodiment of the present invention. exist Figure 4 in, for with figure 2 (first embodiment) and image 3 (Second Embodiment) The same parts are assigned the same reference numerals, and their detailed descriptions are omitted.

[0062] Such as Figure 4 As shown, in this FeRAM 300, there is a local wiring 310 under the word support wiring / board wiring layer. The local wiring 310 with image 3 (Second embodiment) is different, each row is configured with one. Also, one local wiring 310 covers the tops of all the capacitor units 110 in each row. Further, the local wiring 310 is made of, for example, a conductive film having a hydrogen diffusion barrier function such as iridium oxide.

[0063] The plate lines 120 are arranged on these local wirings 310 , and the local wirings 310 and the plate lines 120 are connected by plug electrodes 312 .

[0064] Moreover, althoug...

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Abstract

The invention discloses a ferroelectric memory which has a structure beneficial to the realization of the fining and can execute the processes such as the reading-out and the reading-in like the ordinary ferroelectric memory. The invention comprises a plurality of work lines (161, 162) which are arranged along the same direction and a plurality of bit lines (130) which are arranged along another direction crossing the direction, wherein, a pair of adjacent word lines (161, 162) form a word line pair; a plurality of saw-toothed capacitor units (110) are in a stagger way connected to each word line (161, 162) forming one word line pair; a plurality of bit lines (130) are arranged to ensure that a plurality of capacitor units (110) connected to one word line pair can be selected individually; one pair of word lines (161, 162) is controlled by the same time selection.

Description

technical field [0001] The invention relates to a ferroelectric memory, in particular to a 1T1C / 2T2C stacked FeRAM with a fine structure. Background technique [0002] At present, ferroelectric memory (FeRAM: ferroelectric memory, also known as ferroelectric random access memory) is well known as a nonvolatile memory utilizing the polarization hysteresis characteristic of ferroelectrics. This ferroelectric memory can achieve low power consumption. And high-speed operation, so its demand is increasing day by day. [0003] Further, in ferroelectric memories, similar to other semiconductor devices such as DRAM (Daynamic Random Access Memory: Dynamic Random Access Memory), their fineness and high integration have been gradually improved. For example, Patent Document 1 and Non-Patent Document 1 disclose planar FeRAM. From the perspective of refinement and high integration, stacked ferroelectric memory has more advantages than planar ferroelectric memory. For these reasons, sta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22H01L27/105
CPCH01L27/11507G11C11/22H01L27/11502G11C8/14H10B53/30H10B53/00
Inventor 深田晋一
Owner SEIKO EPSON CORP