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Electroless plating apparatus and method

An electrolytic plating and electroless plating technology, applied in liquid chemical plating, metal material coating process, coating, etc., can solve the problems of uneven coating film thickness, precipitation, particle pollution, etc., to improve film thickness and film Uniformity of quality, stable electroless plating treatment, effect of preventing precipitation

Inactive Publication Date: 2006-05-10
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the electroless plating solution contains a reducing agent as an electron supply source, so it is easy to cause metal precipitation in the liquid, so-called precipitation, especially when it is used under heating.
Precipitation will change the state of the electroless plating solution, so the electroless plating process between wafers will also change. For example, the thickness of the coating film will be uneven. In addition, the precipitated particles will cause particle contamination, which may cause damage to the piping of the electroless plating device. the jam
Patent Document 1 has no description of the instability of such an electrolytic solution

Method used

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  • Electroless plating apparatus and method
  • Electroless plating apparatus and method
  • Electroless plating apparatus and method

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Embodiment Construction

[0047] Next, preferred embodiments of the present invention will be described based on the drawings.

[0048] figure 1 It is an overall configuration diagram showing an embodiment of the electroless plating apparatus of the present invention. figure 1 Reference numeral 11 is a flat cylindrical wafer holder constituting a substrate holding portion with an upper opening formed thereon, and the entire circumference of the upper end peripheral portion of the wafer holder 11 forms a segment portion 12 for holding the peripheral portion of the wafer W as a substrate. In the central portion of the wafer 11 is provided a cylindrical rotation shaft 13 to which a rotation driving portion such as a hollow motor 14 is connected. The wafer holder 11 is rotatable around a vertical axis while supporting the wafer W by the hollow motor 14 . The hollow motor 14 is fixed on a bottom plate 15, and the bottom plate 15 is mounted on a tilt mechanism 16 so as to be tiltable.

[0049] On the oute...

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Abstract

The present invention provides an electroless plating device. The electroless plating solution contains a first chemical solution containing a metal salt and a second chemical solution containing a reducing agent. A switch unit for chemical solution is provided near the confluence of each chemical solution supply pipe, and a plating solution switch unit is provided near the outlet of the electroless plating solution supply pipe where the first and second chemical solutions join. The plating solution in the electroless plating supply pipe surrounded by the switch unit is equal to the discharge amount required for electroless plating on one substrate. Furthermore, the mixing of the two chemical solutions is only performed during the period from the start of the electroplating process on one substrate to the start of the electroplating on the next substrate.

Description

technical field [0001] The present invention relates to an electroless plating apparatus and method for supplying a plating solution onto a substrate to plate a substrate surface such as a wiring metal surface of a semiconductor substrate. Background technique [0002] The multilayered structure of a semiconductor device is composed of layers in which wiring is embedded in an interlayer insulating film by stacking multiple stages. As a preferred wiring material with strong electromigration, for example, copper can be used. As a method of forming the wiring, a concave portion including a groove is formed in the interlayer insulating film, and after the copper is buried in the concave portion, the remaining copper is deposited. A damascene process in which polishing is performed by a polishing method called CMP. [0003] Recently, there have been studies on the possibility of combining the electroless plating method when implementing such copper wiring technology. Electroles...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/16
CPCC23C18/1619C23C18/1628C23C18/163C23C18/1675C23C18/168C23C18/1683
Inventor 定免美保原谦一
Owner TOKYO ELECTRON LTD