Thin film transistor and method for manufacturing the same

Abstract

The invention discloses a film crystal pipe, which comprises the following parts: base, polysilicon layer, patterning grate dielectric layer, grid layer, source polar region, drain region and light dope drain region, wherein the polysilicon layer is set on the base; the patterning grate dielectric layer is set on the polysilicon layer, which possesses the third and fourth parts with the thickness of the third part less than the thickness of the fourth part; the grid layer is set on part of the patterning grate dielectric layer; the source polar region and drain region are set in the polysilicon layer corresponding to the fourth part of patterning grate dielectric layer; the corresponding part of grid layer and polysilicon layer is channel region; the light dope drain region is set in the polysilicon layer corresponding to the third part of patterning grate dielectric layer.

Description

technical field

[0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor and its manufacturing method. Background technique

[0002] In common components, a switch is required to drive the operation of the component. Taking the active display element as an example, it usually uses a thin film transistor (Thin Film Transistor, TFT) as a driving switch. The thin film transistors can be further divided into amorphous silicon (Amorphous Silicon, a-Si) thin film transistors and polysilicon (Poly-Silicon) thin film transistors according to the material of the channel region. Among them, polysilicon thin film transistors have lower power consumption and higher electron mobility than amorphous silicon thin film transistors. Moreover, due to the recent development of laser technology, the manufacturing process temperature of polysilicon thin film transistors has dropped below 600 degrees Celsius, so po...

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