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Nitride semiconductor light-emitting device

A technology for nitride semiconductors and light-emitting devices, applied in semiconductor devices, semiconductor lasers, laser parts, etc., can solve problems such as insufficient restraint, inability to achieve laser oscillation, and thinning

Inactive Publication Date: 2006-06-21
NICHIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the thickness of the active layer of conventional LED devices is quite thick, that is, 0.1 to 0.2 μm, so the thickness of the InGaN grown on the heterogeneous AlGaN layer has exceeded the critical thickness, so it is impossible to use conventional LED devices to achieve sharpness. and strong band-to-band emission
That is, laser oscillation cannot be achieved
At the same time, if the unitary layer is greatly thinned as shown in the above-mentioned unexamined Japanese patent application 6-21511, thereby making the LED device form a quantum well structure, it is possible to obtain strong band-band emission
However, if the thickness of the active layer is to be thinned, the light confinement effect becomes insufficient, thus making it impossible to achieve laser oscillation

Method used

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Examples

Experimental program
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no. 1 example

[0066] According to a first embodiment of the present invention, there is provided a nitride semiconductor light emitting device provided with an active layer interposed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, the active layer comprising Nitride semiconductors of indium and gallium are formed, and constitute a quantum well structure (single quantum well or multiple quantum well structure). As viewed from the active layer side, the above-mentioned p-type nitride semiconductor layer includes a first p-type cladding layer formed of a p-type nitride semiconductor containing aluminum and gallium, and a second p-type cladding layer, It has a band gap larger than that of the first p-type cladding layer and is formed of a p-type nitride semiconductor containing aluminum and gallium.

[0067] FIG. 1 schematically illustrates a cross-sectional view of the structure of a light emitting device (LD) according to a first embodiment of the pres...

no. 4 example

[0093] According to a fourth embodiment of the present invention, there is provided a nitride semiconductor light emitting device in which an active layer as in Embodiment 1 is provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The above-mentioned P-type nitride semiconductor layer includes: a first P-type cladding layer formed of P-type nitride semiconductor containing aluminum and gallium, which is in contact with the active layer, and its thickness is in the range of 10 Å to 1.0 μm.

[0094] Although the structure of the light-emitting device according to the fourth embodiment is not shown in the accompanying drawings, it is basically the same as that shown in Figure 1, that is, the substrate, n-type and p-type contact layer, active layer and n-type and p-type The thickness and material of the type covering layer are basically the same as those described with reference to the drawings. The main feature of the fourth embodiment i...

example 1

[0178] This Example 1 will be described below with reference to FIG. 1 .

[0179] First, using TMG (trimethylgallium) and NH 3 As a raw material, a buffer layer made of GaN was grown at a temperature of 500°C to a thickness of 200 angstroms on the C plane of the sapphire substrate 11 which had been placed in the reactor beforehand.

[0180] Then, the temperature was raised to 1050 °C, in which case silane gas was added to TMG and NH 3 In , an n-type contact layer 12 composed of Si-doped n-type GaN was thus grown to a thickness of 4 μm.

[0181] Next, the temperature is lowered to 800°C, and TMI (trimethylindium) is added to the raw material gas, thereby growing Si-doped n-type In 0.05 Ga 0.95 The n-type cladding layer 13 made of N has a thickness of 500 angstroms.

[0182] When the temperature of 800°C is maintained, the growth of non-doped n-type In 0.2 Ga 0.8 The active layer 14 of the single quantum well structure composed of N is up to 20 angstroms thick.

[0183] T...

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Abstract

A nitride semiconductor light-emitting device has an active layer (14) of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer (61) made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer (62) made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer (62) has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer (13) is provided in contact with the other surface of the active layer (14).

Description

[0001] This application is a divisional application of Chinese patent application 02142888.3 (original parent application number: 95117565.3). technical field [0002] The present invention relates to a semiconductor light emitting device, such as a light emitting diode (LED) or a laser diode (LD), in particular to a light emitting device having a semiconductor structure formed of all nitride semiconductor materials. Background technique [0003] As materials for light-emitting devices such as LEDs or LD devices that are expected to emit light ranging from ultraviolet light to red light, nitride semiconductor materials (In x al y Ga 1-x-y N; 0≤X, 0≤Y, X+Y≤1), and blue and blue-green LEDs have been actually used in displays or annunciators, for example. [0004] For example, the blue LED or blue-green LED formed of nitride semiconductor materials and the currently used light emitters have a double heterostructure. The basic structure of this light-emitting device is such th...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32H01S5/343
Inventor 中村修二长滨慎一岩佐成人清久裕之
Owner NICHIA CORP