Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solid-state imaging device and its manufacturing method

A technology of a solid-state imaging device and a manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, image communication, etc., and can solve problems such as defects and difficulty in miniaturizing the imaging area 107

Inactive Publication Date: 2006-07-19
PANASONIC CORP
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the imaging region 107, when LOCOS or STI (Shallow Trench Isolation) is formed in the element isolation region, defects are likely to occur due to film stress such as the nitride film and a long-term high-temperature heat treatment process.
This defect is the cause of dark current and white scars
Furthermore, when LOCOS is formed, since the width of the bird's beak becomes longer, it becomes difficult to miniaturize the imaging area 107

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state imaging device and its manufacturing method
  • Solid-state imaging device and its manufacturing method
  • Solid-state imaging device and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0118] Figure 1A ~ Figure 1F It is a cross-sectional view showing a step of forming an element isolation region in the manufacturing process of the solid-state imaging device according to the first embodiment.

[0119] In the manufacturing process of the solid-state imaging device of this embodiment, first, in Figure 1A In the shown steps, a liner insulating film 2 made of a silicon oxide film with a thickness of about 1 to 50 nm is formed on a semiconductor substrate 1 . On the liner insulating film 2, an oxidation resistant film 3 made of a silicon nitride film or the like with a thickness of about 50 to 400 nm is formed. Furthermore, on the oxidation-resistant film 3, a resist (not shown) having openings in predetermined regions is formed.

[0120] Then, by etching using the resist as a mask, opening 4 penetrating liner insulating film 2 and oxidation resistant film 3 and exposing a predetermined region in the upper surface of semiconductor substrate 1 is formed. After...

no. 2 Embodiment approach

[0134] Figure 2A ˜ FIG. 2F are cross-sectional views showing a step of forming an element isolation region in the manufacturing process of the solid-state imaging device according to the second embodiment.

[0135] In the manufacturing process of the solid-state imaging device of this embodiment, first, in Figure 2A In the shown steps, a liner insulating film 2 made of a silicon oxide film with a thickness of about 1 to 50 nm is formed on a semiconductor substrate 1 . On the liner insulating film 2, an oxidation resistant film 3 made of a silicon nitride film or the like with a thickness of about 50 to 400 nm is formed. Furthermore, on the oxidation-resistant film 3, a resist (not shown) having openings in predetermined regions is formed.

[0136] Then, by etching using the resist as a mask, opening 4 penetrating liner insulating film 2 and oxidation resistant film 3 and exposing a predetermined region in the upper surface of semiconductor substrate 1 is formed. After tha...

no. 3 Embodiment approach

[0151] Figure 3A ~ Figure 3D It is a cross-sectional view showing a step of forming an element isolation region in the manufacturing process of the solid-state imaging device according to the third embodiment.

[0152] In the method of manufacturing the solid-state imaging device of this embodiment, first, in Figure 3A In the shown steps, a liner insulating film 2 made of a silicon oxide film with a thickness of about 1 to 50 nm is formed on a semiconductor substrate 1 . On the liner insulating film 2, an oxidation resistant film 3 made of a silicon nitride film or the like with a thickness of about 50 to 400 nm is formed. Furthermore, on the oxidation-resistant film 3, a resist (not shown) having openings in predetermined regions is formed.

[0153] Then, by etching using the resist as a mask, opening 4 penetrating liner insulating film 2 and oxidation resistant film 3 and exposing a predetermined region in the upper surface of semiconductor substrate 1 is formed. After ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

In a method for manufacturing a solid-state imaging device of the present invention, a pad insulting film 2 made of an oxide film and an anti-oxidizing film 3 made of a nitride film are deposited on a n-type semiconductor substrate 1 . Then, an opening 4 is formed to expose an element isolation formation region of the semiconductor substrate 1 . Next, an anti-oxidizing film (not shown) for burying the opening 4 is formed on the substrate and anisotropic etching is performed to form a sidewall 5 . Subsequently, a trench 6 is formed using the anti-oxidizing film 3 and the sidewall 5 as a mask. Then, a p-type impurity is implanted into a part of the semiconductor substrate 1 which is exposed at the side face of the trench 6 and a thermal oxide film is formed in the surface portion of the trench 6 in the semiconductor substrate 1 . Thereafter, the trench 6 is buried with a burying film 8.

Description

technical field [0001] The present invention relates to a solid-state imaging device and a manufacturing method thereof, and particularly to a solid-state imaging device in which an imaging region having a plurality of pixels is provided on a semiconductor substrate and a manufacturing method thereof. Background technique [0002] The MOS type solid-state imaging device is an image sensor (image sensor) that amplifies and reads out a signal supplied to each pixel by an amplifier circuit including a MOS transistor. The so-called CMOS image sensor manufactured by the CMOS process in the solid-state imaging device has the advantages of low voltage, low power consumption, and can be integrated with peripheral circuits on one chip. Therefore, in recent years, CMOS image sensors have attracted much attention as image input devices for portable devices such as compact video cameras for PCs. [0003] Figure 10 It is a circuit diagram showing an example of the structure of a solid-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/146H04N5/335H01L21/76
Inventor 森三佳山口琢己吉田真治
Owner PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com