Solid-state imaging device and its manufacturing method

A technology of a solid-state imaging device and a manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, image communication, etc., and can solve problems such as defects and difficulty in miniaturizing the imaging area 107
CN1806335AInactive Publication Date: 2006-07-19PANASONIC CORP
1 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
PANASONIC CORP
Publication Date
2006-07-19
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

In a method for manufacturing a solid-state imaging device of the present invention, a pad insulting film 2 made of an oxide film and an anti-oxidizing film 3 made of a nitride film are deposited on a n-type semiconductor substrate 1 . Then, an opening 4 is formed to expose an element isolation formation region of the semiconductor substrate 1 . Next, an anti-oxidizing film (not shown) for burying the opening 4 is formed on the substrate and anisotropic etching is performed to form a sidewall 5 . Subsequently, a trench 6 is formed using the anti-oxidizing film 3 and the sidewall 5 as a mask. Then, a p-type impurity is implanted into a part of the semiconductor substrate 1 which is exposed at the side face of the trench 6 and a thermal oxide film is formed in the surface portion of the trench 6 in the semiconductor substrate 1 . Thereafter, the trench 6 is buried with a burying film 8.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a solid-state imaging device and a manufacturing method thereof, and particularly to a solid-state imaging device in which an imaging region having a plurality of pixels is provided on a semiconductor substrate and a manufacturing method thereof. Background technique

[0002] The MOS type solid-state imaging device is an image sensor (image sensor) that amplifies and reads out a signal supplied to each pixel by an amplifier circuit including a MOS transistor. The so-called CMOS image sensor manufactured by the CMOS process in the solid-state imaging device has the advantages of low voltage, low power consumption, and can be integrated with peripheral circuits on one chip. Therefore, in recent years, CMOS image sensors have attracted much attention as image input devices for portable devices such as compact video cameras for PCs.

[0003] Figure 10 It is a circuit diagram showing an example of the structure of a solid-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More