Production and producer for cadmium sulfide

A production process and production equipment technology, applied in the production process and equipment field of cadmium sulfide thin film, can solve the problems of unsatisfactory film uniformity and compactness, difficult to control the reaction process, complicated electrodeposition process, etc., and the reaction speed is easy to achieve Control, easy control of process parameters, rich source of raw materials

Inactive Publication Date: 2006-08-16
HUNAN NORMAL UNIVERSITY
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Molecular beam epitaxy growth method, vacuum thermal evaporation method, laser evaporation method and chemical vapor deposition method require high vacuum and large equipment, large investment and high production cost
The electrodeposition process is more complicated, and it is easy to introduce other chemical substances into the film
At present, more water bath methods are used, and the substrate is usually placed in the center of the solution, which causes heat to be transferred to the reaction solution first, and then to the substrate through the reaction solution, so there is a cadmium sulfide in the solution or on the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production and producer for cadmium sulfide
  • Production and producer for cadmium sulfide
  • Production and producer for cadmium sulfide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Select FTO glass as the substrate 101, ultrasonically clean with acetone for 5 minutes, methanol for 5 minutes, deionized water for 5 minutes, dry, then put it into the reactor 102 and close to the wall; ( 2) Dissolve the weighed cadmium dichloride, ammonium chloride, thiourea, and ammonia water in high-purity water, and the prepared solution concentrations are respectively: cadmium dichloride 0.006mol / L, ammonium chloride 0.002mol / L, sulfur Urea 0.15mol / L, ammonia 0.4mol / L, filter; inject it in the reactor 102 through the solution injection port of the conveyor belt 1, to submerge the top of the substrate 101; (3) place the reactor 102 in the thermostatic chamber 10, Send hot water (i.e. heat medium solution) through the booster pump 202 and keep the water temperature constant at 85 ° C, introduce 40 kHz ultrasonic waves, and react for 20 minutes; (4) After the reaction is completed, pour out the reaction solution and add the same temperature The distilled water wa...

Embodiment 2

[0027] (1) Select ITO glass as the substrate 101, ultrasonically clean with acetone for 4 minutes, methanol ultrasonically for 6 minutes, deionized water for ultrasonically for 5 minutes, dry, then put it into the reactor 102 and close to the wall; ( 2) Dissolve the weighed cadmium dichloride, ammonium chloride, thiourea, and ammonia water in high-purity water, and the prepared solution concentrations are respectively: cadmium dichloride 0.005mol / L, ammonium chloride 0.002mol / L, sulfur Urea 0.10mol / L, ammonia water 0.3mol / L, filter; (3) keep the water temperature constant at 80°C with hot water, introduce 50 kHz ultrasonic waves, and react for 15 minutes; (4) After the reaction is completed, pour out the reaction solution, Add distilled water at the same temperature to shake and clean for 4 minutes, then pour out the cleaning solution, then add 3wt% ammonium nitrate solution at the same temperature, ultrasonically clean for 5 minutes, pull out the rough particles on the surface...

Embodiment 3

[0030] (1) Select SnO plating 2 Glass is used as the substrate 101, which is ultrasonically cleaned with acetone for 6 minutes, methanol for 4 minutes, deionized water for 6 minutes, dried, and then put into the reactor 102 and close to the wall of the device; (2) weigh Dissolve cadmium dichloride, ammonium chloride, thiourea, and ammonia water in high-purity water, and the concentrations of the prepared solutions are: cadmium dichloride 0.007mol / L, ammonium chloride 0.002mol / L, and thiourea 0.20mol / L , ammonia 0.4mol / L, filtered; (3) hot water to keep the water temperature constant at 90°C, introduce 55 kHz ultrasonic waves, and react for 25 minutes. Others are the same as embodiment 1.

[0031] The cadmium sulfide film prepared in this example has a wurtzite (hexagonal) crystal structure.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The method includes: 1) washing up and drying the substrate; placing the substrate against the reactor wall; 2) preparing material solution by using cadmium salt, ammonium salt, organic compounds containing sulfur and ammonia; filling the material solution into the reactor until top of substrate is submerged; 3) putting the reactor into thermostatic chamber, and keeping the water temperature from 70íµ to 95íµ, and introducing 20- 60 khz ultrasonic wave to react 10-60 min.; 4) after completing reaction, cleaning up it by using osculation of distilled water and ultrasonic wave of ammonium nitrate. The facility thereof consists of a medium solution heater, a thermostatic chamber, a booster pump located between heater and thermostatic chamber, a suspension gear located at upper portion of thermostatic chamber and hanging in the thermostatic room. At the bottom of the thermostatic chamber there is an ultrasound transducer.

Description

technical field [0001] The invention relates to a production process and equipment for a cadmium sulfide film, in particular to a production process and equipment for a cadmium sulfide film formed by combining ultrasonic technology with a chemical water bath method. Background technique [0002] Cadmium sulfide thin films are widely used in solar cells, sensors, photodetectors, laser materials, optical waveguide devices and nonlinear integrated optical devices and other fields. At present, the preparation methods of cadmium sulfide film mainly include: molecular beam epitaxy growth method, vacuum thermal evaporation method, laser evaporation method, chemical vapor deposition method, electrodeposition method and chemical water bath method, etc. Molecular beam epitaxy growth method, vacuum thermal evaporation method, laser evaporation method and chemical vapor deposition method require high vacuum and large equipment, large investment and high productio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/368
Inventor 羊亿刘敏
Owner HUNAN NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap