Structure for reducing noise in cmos image sensors
A technology of image sensors and field effect transistors, applied in the direction of semiconductor devices, electric solid state devices, diodes, etc., can solve the problems of inconvenience and lack of structure of general products, achieve accuracy and quality improvement, improve cost structure, and easily achieve with the effect obtained
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[0043] In order to further illustrate the technical means and effects of the present invention to achieve the intended purpose of the invention, below in conjunction with the accompanying drawings and preferred embodiments, the reduction of complementary metal oxide half-field-effect transistor image sensor noise proposed by the present invention will be described below. The structure, its specific implementation, structure, characteristics and effects thereof are described in detail below.
[0044] The present invention discloses an improved method and structure for enhancing noise immunity in a Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOS) image sensor device. The present invention uses light blocking layers to further minimize and help eliminate stray and undesired light that causes electrical noise within the pixel array.
[0045] see figure 1 As shown, it is a top view showing main areas of a conventional CMOS image sensor (CIS) device 100 . The...
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