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Ultrafast, anti-radiation nanometer line over-voltage protector

A nanowire and overvoltage technology, applied in the direction of overvoltage protection resistors, varistors, etc., can solve the problems of insufficient reversibility of device phase change and difficulties in actual use, and achieve good reusability, short transition time, Devices use highly reproducible results

Inactive Publication Date: 2006-10-11
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The phase change reversibility of the above-mentioned devices is insufficient, so it is still difficult to use them in practice

Method used

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  • Ultrafast, anti-radiation nanometer line over-voltage protector
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  • Ultrafast, anti-radiation nanometer line over-voltage protector

Examples

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Embodiment 1

[0030] 1. Preparation of Ag(TCNQ) nanowire overvoltage protector

[0031] according to figure 1 The route shown prepares Ag(TCNQ) nanowire overvoltage protector. The substrate 1 is a flat silicon wafer, and the insulating layer 2 is a silicon dioxide layer with a thickness of 5000A. The insulating layer is made into a hole-like structure by photolithography, and is divided into multiple regions, and 3×4 holes are distributed in each region, the hole diameter is 5 μm, and the hole spacing is 8 μm. First, a silver film with a thickness of 20nm is plated in the holes of the substrate by electroplating, and then the Ag-TCNQ nanowire array 4 is prepared by a saturated vapor transport method. A vacuum evaporation method is used to vapor-deposit an aluminum film with a thickness on the order of μm as the top electrode 3, and then cut the sample, and press-weld the lead 5 from the top electrode and the bottom electrode.

[0032] 2. Transition time test

[0033] The transition time...

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Abstract

The disclosed ultrafast anti-radiation nano-wire overvoltage protector comprises a bottom electrode, a top electrode, and an insulated layer with metallo-organic complex of M-TCNQ nano wire (array) (M = Ag, Cu, K or Mg) to connect the former electrodes. Wherein, the reversible electrical bistability of M-TCNQ nano wire means: the wire jumps from high resistance state to the low with resistivity within 5-6 magnitude order and within 50ns when the voltage comes up to a threshold, and can automatic backs to the initial state when electric field removes. This invention is radioresistant, and has wide application.

Description

technical field [0001] The invention belongs to the technical field of nanometer electronic devices, in particular to an ultra-fast and anti-radiation nanowire overvoltage protector. Background technique [0002] The overvoltage protector is used in communication equipment, airborne equipment, control equipment, etc., and its purpose is to ensure that no large current will enter key components in the event of surge voltage shock or any other voltage overload. [0003] The quality of the overvoltage protector depends on the following two points. First, it must have a sufficiently small response time to avoid damage to the instrument by surge voltage, and second, it must have high reliability. At present, the response time of traditional overvoltage protectors based on automatic control systems is generally on the order of microseconds, and their reliability is also limited. Therefore, the research on ultra-fast and highly reliable overvoltage protectors is of great significan...

Claims

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Application Information

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IPC IPC(8): H01C7/10H01C7/12
Inventor 陈国荣郑凯波沈浩颋叶春暖莫晓亮姚彦孙大林
Owner FUDAN UNIV