Method for preparing Yt-Ba-Cu-O high-temperature superconductive film fine-pattern

A technology of high-temperature superconducting thin film and yttrium-barium-copper-oxygen is applied in the usage of superconducting elements, manufacturing/processing of superconducting devices, superconducting devices, etc. It can solve problems such as difficult corrosion and high-quality micro-graphics, etc. To achieve the effect of regular graphics

Inactive Publication Date: 2006-10-25
XIAN UNIV OF TECH
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, some functional ceramic films have strong corrosion resistance and are extremely diff

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing Yt-Ba-Cu-O high-temperature superconductive film fine-pattern
  • Method for preparing Yt-Ba-Cu-O high-temperature superconductive film fine-pattern
  • Method for preparing Yt-Ba-Cu-O high-temperature superconductive film fine-pattern

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0019] The preparation method of the sol for the above-mentioned yttrium barium copper oxide high temperature superconducting film comprises the following steps:

[0020] 1) Dissolve yttrium acetate in methanol, add a small amount of diethylenetriamine and benzoylacetone, so that yttrium acetate:methanol:diethylenetriamine:benzoylacetone=1:(10~40):(1~5): (0~2), form solution A after stirring;

[0021] 2) Dissolve barium acetate in a mixed solution containing water and trifluoroacetic acid, so that barium acetate: water: trifluoroacetic acid = 1: (10-80): (2-5), after stirring and dissolving, after 65 ° C ~ Dry at 85°C, and dissolve the resulting product in methanol solution so that the molar ratio Ba 2+ : Methanol=1: (10~40), obtain solution B;

[0022] 3) Dissolve copper acetate in methanol, add a small amount of acrylic acid and phenylacetone, so that copper acetate: methanol: acrylic acid: benzoylacetone = 1: (10~40): (2~10): (0.1~2) , forming solution C after slight hea...

Embodiment 1

[0030] Using yttrium-barium-copper-oxygen high-temperature superconducting sol, coat a layer of gel film on the single crystal LAO (001) substrate at room temperature, and dry the obtained gel film at 90°C , irradiated under ultraviolet light for 8 minutes through a mask, and then washed by methanol, the fine pattern of the gel film can be obtained. Subsequently, after the film was kept at 150-200°C for 10 minutes, the water vapor pressure was 4% O 2 In the atmosphere, the temperature was raised to 450°C at a rate of 5°C / min, and kept for 10 minutes. Subsequently, the obtained inorganic membrane was treated with high-purity N 2 In the gas, the temperature is rapidly raised to 780 ° C, and the temperature is kept at 4% water vapor for 2 hours. Subsequently, the atmosphere was switched to dry nitrogen. After continuing to keep warm for 30 minutes, with the furnace cooling down to 550°C, switch the gas to dry O 2 , and kept at 450°C for 3 hours, and finally cooled down to roo...

Embodiment 2

[0032] Using the prepared yttrium-barium-copper-oxygen high-temperature superconducting sol, through the pulling method, the (010)-oriented LaAlO 3 A layer of gel film is coated on the single crystal substrate, and the obtained gel film is dried at 100°C, irradiated with ultraviolet light through a mask for 10 minutes, and then washed with methanol to obtain a fine pattern of the gel film. Under the protection of oxygen, the gel film was incubated at 200 °C for 10 minutes, and then heated in O with 4% water vapor content. 2In the atmosphere, the temperature was raised to 400°C at a heating rate of 10°C / min, and kept for 10 minutes, and then taken out after being cooled in the furnace. Subsequently, the obtained inorganic film was exposed to 1% oxygen in N 2 / O 2 In the mixed atmosphere, rapidly raise the temperature to 750°C, switch to the same gas containing 4% water vapor, and keep it warm for 2 hours. After the hold, switch the gas to dry N with 1% oxygen 2 / O 2 Mixed ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Critical transition temperatureaaaaaaaaaa
Superconducting transition temperatureaaaaaaaaaa
Login to view more

Abstract

This invention discloses a preparation method for micrograph of YBCO high temperature and superconductive films, which utilizes YBCO gel with sensitive property and applies a micro-process method combining a chemical modification method and a Sol-Gel method to prepare the graph period reaching to the mum level.

Description

technical field [0001] The invention relates to a film material in the field of microelectronics and materials, and relates to a method for preparing fine patterns of superconducting thin films, specifically, a method for preparing fine patterns of yttrium-barium-copper-oxygen high-temperature superconducting films. Background technique [0002] The chemical formula of yttrium barium copper oxide is YBa 2 Cu 3 o 7-x , abbreviated as YBCO. Yttrium barium copper oxide thin film can be used in the field of microelectronics to make various high, precise and sharp electronic devices, such as superconducting quantum interference device (SQUID), superconducting coupled antenna (Antenna-coupled), superconducting detector (Superconductorbolometric detectors) etc. [0003] Thin film micro-patterning technology is one of the key technologies in the fields of optoelectronics and microelectronics. For a long time, the micro-patterning of thin films mainly ad...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L39/24C01G1/02C04B35/624C04B35/64H01B12/00
CPCY02E40/60
Inventor 赵高扬张黄莉陈源清
Owner XIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products