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Protection method and structure for ESD of compound semiconductor

An electrostatic discharge, semiconductor technology, used in semiconductor devices, semiconductor/solid-state device components, circuits, etc.

Inactive Publication Date: 2006-12-27
NAN YA PHOTONICS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] To sum up, there is no document or invention patent that directly uses the ceramic zinc oxide element as the flip-chip substrate of the semiconductor element. Therefore, the inventor of this case tried to combine the two elements based on this idea. To solve overvoltage and anti-static protection, finally invented a III-V flip-chip semiconductor structure that protects compound semiconductors from electrostatic discharge damage

Method used

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  • Protection method and structure for ESD of compound semiconductor
  • Protection method and structure for ESD of compound semiconductor
  • Protection method and structure for ESD of compound semiconductor

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Embodiment Construction

[0027] The present invention proposes a method for protecting a compound semiconductor from electrostatic discharge and a III-V flip chip semiconductor structure with electrostatic discharge protection capability, wherein the III-V flip chip semiconductor structure has a compound semiconductor Structure and zinc oxide substrate, the former is called a semiconductor light-emitting part (hereinafter referred to as the semiconductor part), the latter is called an electrostatic circuit protection part (hereinafter referred to as the protection part), and the former will be referred to as III-V below The group element nitride semiconductor material light-emitting diode is taken as an example, and blue light and green light diodes are taken as the preferred embodiments of the light-emitting diode. Of course, other types with light-receiving and microwave component capabilities can be used. Semiconductor structures in the form of flip chips are also within the scope of the present inv...

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Abstract

The related crystal-clad semiconductor element with electrostatic protective capacity to avoid ESD damage comprises: a part of compound semiconductor, and another part of ZnO plate for protection to form an over-voltage voltage-variable resistor with two electrodes combined and paralleled with the semiconductor electrodes. Usually, the electrodes of protection part are almost open with less leakage current; if coming static electricity, it forms a discharge loop for protection.

Description

technical field [0001] The invention relates to the field of electrostatic protection of compound semiconductor elements, and more particularly relates to a method for protecting compound semiconductor elements from electrostatic discharge damage and a flip-chip compound semiconductor element with electrostatic discharge protection capability. Background technique [0002] Compound semiconductor devices are often used as light-emitting devices, etc., and have to face the same problem of static electricity as other electronic devices. Generally speaking, a compound semiconductor device is often connected in parallel with a Zener diode or a nitro diode as an antistatic method, or a filter circuit may be connected in series. In addition, when the diodes are connected in parallel, the diodes of the same configuration but reversed can also improve the ability of electrostatic protection. [0003] In recent years, III-V compound semiconductor materials have attracted a lot of att...

Claims

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Application Information

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IPC IPC(8): H01L23/60H01L21/28H01L33/00H01L33/62
CPCH01L2224/16145H01L2224/48463
Inventor 张连壁洪详竣郑维昇苏崇智方博仁王瑞瑜余尉平叶翳民
Owner NAN YA PHOTONICS INC
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