Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for reducing super large scale integrated circuit contact hole resistance

A contact hole and resistance technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as poor conductivity, response time not meeting requirements, and affecting device response speed, etc., to solve the problem of excessive contact resistance big effect

Inactive Publication Date: 2007-01-03
SHANGHAI HUA HONG NEC ELECTRONICS
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The conductivity of devices manufactured by this process is not good. For some devices with high requirements, there will be a series of problems including the response time not meeting the requirements and the reliability of the device. The reason can be attributed to The ohm value of the contact resistance of the contact hole of the device manufactured by the original process is too large, which affects the response speed of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for reducing super large scale integrated circuit contact hole resistance
  • Method for reducing super large scale integrated circuit contact hole resistance
  • Method for reducing super large scale integrated circuit contact hole resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0011] figure 1 It is a process flow chart of the present invention, describing the refractory metal silicide formation process and the steps of forming a refractory metal silicide layer at the bottom of the contact hole. Step 101, first perform contact hole etching, and perform degelling treatment after the contact hole is opened; step 102, HF etching, remove silicon dioxide on the surface of polycrystalline silicon and single crystal silicon; step 103, perform refractory metal The film is grown by sputtering, and then the first rapid heat treatment is carried out in step 104, so that the refractory metal reacts with the polycrystalline and single crystal silicon at the bottom of the contact hole to complete the first crystal transformation; step 105, perform selective etching, Remove unreacted refractory metal atoms. Finally, step 106 is performed, and th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses method for reducing very large scale integrated circuit contact hole contact resistance, which adopts high melting metal silicide technology to generate high melting metal silicide layer on contact hole bottom, used as polycrystal and monocrystalline silicon contact surface. It contains: etching contact hole, HF etching, high melting metal film sputtering growth, first rapid heat treatment process (RTP 1), selectivity etching, second rapid heat treatment process (RTP 2), through above-mentioned process, grown out high melting metal silicide layer on contact hole bottom i.e. polycrystal and monocrystalline silicon surface, thereby reducing contact resistance, speeding up device responser time and raising device operational reliability.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, especially a method for integration and process control of a VLSI contact hole (contact) module. Background technique [0002] At present, in the known semiconductor production process of 0.5 micron or above, some traditional processes, ie non-refractory metal silicide formation process, are usually adopted. The conductivity of devices manufactured by this process is not good. For some devices with high requirements, there will be a series of problems including the response time not meeting the requirements and the reliability of the device. The reason can be attributed to The ohm value of the contact resistance of the contact hole of the device manufactured by the original process is too large, which affects the response speed of the device. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a method for reducing the contact hol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768H01L21/28
Inventor 陈华伦周贯宇
Owner SHANGHAI HUA HONG NEC ELECTRONICS