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Electronic device and method for manufacturing the electronic device

A manufacturing method and technology of electronic devices, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor/solid-state device components, etc., can solve the problem of weak adhesion of the substrate surface layer, insufficient adhesion strength of the substrate surface layer, and peeling of bonding pads, etc. problems, achieve the effect of reducing process burden, improving peel resistance, and high productivity

Inactive Publication Date: 2007-01-31
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the film formed by the droplet discharge method is composed of an aggregate of fine particles of functional materials, there is generally a problem that the adhesion to the surface layer of the substrate is weaker than that of the film formed by the vapor phase method.
Therefore, when the bonding pads are formed of Au, etc., which have suitable electrical properties and are excellent in properties as a liquid, the adhesion strength to the surface layer of the substrate is insufficient, and the bonding pads may be peeled off due to the stress generated during wire bonding.

Method used

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  • Electronic device and method for manufacturing the electronic device
  • Electronic device and method for manufacturing the electronic device
  • Electronic device and method for manufacturing the electronic device

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no. 1 Embodiment approach

[0021] (Structure of Electronic Devices)

[0022] First, refer to figure 1 The electronic device according to the first embodiment will be described. figure 1 It is a partially broken perspective view showing the main part structure of the electronic device according to the first embodiment.

[0023] figure 1 Among them, an integrated circuit 1 as an electronic device includes: a silicon substrate 2 formed with semiconductor elements (not shown); an insulating layer 3 formed of BPSG (Boron-doped Phospho Silicate Glass) or the like formed on the silicon substrate 2; Conductive wiring 5 composed of Al or the like for semiconductor element connection; and SiO as the conductive wiring 5 covered 2 or the covering layer 4 of a Si-based insulating layer made of SiN or the like. Bonding pads 8 connected to conductive wiring 5 through contact holes 10 are formed on covering layer 4 , and bonding pads 8 are connected to a lead frame (not shown) via bonding wires 9 .

[0024] Bondin...

no. 2 Embodiment approach

[0050] Below, refer to Figure 5 , the second embodiment of the present invention will be described focusing on the differences from the first embodiment. Figure 5 It is a partially broken perspective view showing the main part structure of the electronic device according to the second embodiment.

[0051] exist Figure 5 Among them, the integrated circuit 20 as an electronic device includes: a silicon substrate 21 formed with a semiconductor element (not shown); an insulating layer 22 as a Si-based insulating layer formed on the silicon substrate 21; a bank layer 23; The conductive wiring 25 and the bonding pad 26 are integrally formed by the droplet discharge method. The bank layer 23 is formed of a photosensitive resin or the like, and is patterned using a photolithography technique so as to divide the formation regions of the conductive wiring 25 and the bonding pad 26 .

[0052] The conductive wiring 25 and the bonding pad 26 are formed to have a laminated structure o...

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Abstract

The invention provides a method for manufacturing the electronic device with high productivity to produce much reliable electronic device and the electronic device obtained from such method. An integrated circuit 1 has a bonding pad 8 of a double layer structure connected to a conductive wiring 5 via a contact hole 10. The bonding pad 8 has a surface layer 7 bonded to the bonding wire 9, and a foundation layer 6 which improves adhesion between the surface layer 7 and a coating layer 4. The foundation layer 6 and the surface layer 7 are formed by a droplet delivery method, and Ni and Au are used as materials which can be liquefied under conditions suitable for use in the droplet delivery method.

Description

technical field [0001] The present invention relates to electronic devices such as semiconductor integrated circuits or semiconductor sensors and their manufacturing methods. Background technique [0002] In recent years, in the manufacture of electronic devices, there has been known a method of forming fine conductor patterns, circuit elements, and the like using a so-called droplet discharge method (for example, Patent Document 1). This technology discharges a liquid containing fine particles of functional materials onto a substrate by a droplet ejection head such as that used in an inkjet printer, performs pattern formation, and then solidifies the liquid by drying or the like of (membrane). The droplet discharge method is attracting attention as an excellent technology in terms of productivity and environment because the process is simpler and the utilization efficiency of functional materials is excellent compared with photolithography, which is a general patterning te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3205H01L21/288H01L21/60H01L23/482
CPCH01L2224/05639H01L2924/01082H01L2924/01004H01L24/05H01L2924/01025H01L2924/01029H01L2224/02166H01L2924/01028H01L2924/01013H01L2924/01024H01L2224/05644H01L24/48H01L24/03H01L2924/01047H01L2224/85399H01L2924/01007H01L2924/01079H01L2224/48463H01L2224/04042H01L2224/05647H01L2924/14H01L2924/01005H01L2924/01033H01L2224/05073H01L2924/01006H01L2924/01078H01L2924/01014H01L2924/00014H01L2224/023H01L2224/45099H01L2224/05599H01L2924/0001
Inventor 森山英和
Owner SEIKO EPSON CORP
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