Method for III family elements two-time spreading and raising large power transistor blocking current-voltage characteristics
A technology with volt-ampere characteristics and high power, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of large blocking leakage current and low blocking voltage, and achieve high surface concentration, smooth concentration, and solution The effect of unsatisfactory volt-ampere characteristics
Inactive Publication Date: 2007-03-21
鞍山市华辰电力器件有限公司
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Problems solved by technology
Devices manufactured by the method of gallium element diffusion have a phenomenon that the blocking leakage current is relatively large at room temperature and the blocking voltage is relatively low
However, the devices manufactured with boron and aluminum as the impurity source have a phenomenon that the blocking leakage current is too large at high temperature.
Method used
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specific Embodiment approach
[0024] Through many experiments, the specific embodiment of the present invention is described as follows:
[0025] The method for improving the blocking volt-ampere characteristic of a high-power thyristor by twice diffusion of group III elements is characterized in that the method comprises the following steps:
[0026] 1. Super sand
[0027] Put the silicon wafer into the cleaning solution. The ratio of the cleaning solution is, industrial cleaning agent: deionized water = 5ml: 750ml, ultrasonic cleaning for 40 minutes, then rinse with deionized water at 40°C to 60°C, and then hot water Ultrasound twice, rinse with hot high-purity water twice;
[0028] 2. Clean silicon wafer
[0029] Place the wafer in 1 # In cleaning solution, 1 # The ratio of the cleaning solution is ammonia water: hydrogen peroxide: high-purity water = 1:2:5, cook on the electric stove for 15 minutes, then rinse with high-purity water 20 times, and then replace it with a new one. # Boil the cleaning...
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The invention is concerned with producing field of the high efficiency power semiconductor parts thyristor, especially the method that the III group element diffuses twice to improve high efficiency thyristor interdiction volt-ampere characteristic. The method includes the following steps: exceeds granule, cleans silicon chip, and cleans quartz closed-pipe source bottle, one time diffusion, and two time diffusion. It is: the normal temperature interdiction improves obviously, the leaking current minishs compare with the gallium extension obviously, and the high temperature leaking current minishs compare with the boron aluminum extension obviously. The invention is that not only improves the surface density of the CMOS chip, but also makes the P+ impurity thickness in the CMOS chip become stable.
Description
technical field [0001] The invention relates to the field of production technology of thyristors of high-power power semiconductor devices, in particular to a method for twice-diffusion of Group III elements to improve the blocking volt-ampere characteristics of high-power thyristors. Background technique [0002] At present, in the production process of high-power thyristors in China, N-type single crystal silicon is used as raw material to prepare J 1 J 2 Knot. There are two commonly used methods: gallium diffusion and boron aluminum diffusion. Devices manufactured by the method of gallium element diffusion have a phenomenon that the blocking leakage current is relatively large at room temperature and the blocking voltage is relatively low. However, the devices manufactured with boron and aluminum as the impurity source have a phenomenon that the blocking leakage current is too large at high temperature. ...
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Login to View More IPC IPC(8): H01L21/332H01L21/22
Inventor 侯忠岩于能斌
Owner 鞍山市华辰电力器件有限公司