Semicoductor circuit, inverter circuit, semiconductor apparatus

Abstract

The semiconductor circuit includes a voltage-controlled semiconductor device (N)N, the resistance value of which is controllable with a high voltage, the drain terminal of the N can be connected to the gate terminal (control terminal) of an output semiconductor device (NO) via a resistor (R), the source terminal of the N is connected to the emitter terminal of the NO, and the gate terminal of the N is connected to the collector terminal, which is the output terminal, of the NO. When the input terminal of the semiconductor circuit is at the Hi-level, the NO OFF. By connecting the output terminal of the NO to the high-potential-side of a high-voltage circuit disposed separately and the negative electrode of a control power supply (VDD) to the low-potential-side of the high-voltage circuit in the state, a desired high voltage is applied between the collector and emitter of the NO. Since a p-channel MOSFET (PD) is turned ON as the input terminal potential is changed over to the Lo-level and the high voltage is still being applied to the output terminal of the NO, the N is turned ON and the NO is brought into the ON-state, in which the current driving ability of the NO is low. The semiconductor circuit can protect the devices from an over voltage with a simple circuit configuration.

Description

technical field [0001] The present invention relates to a semiconductor circuit, an inverter circuit, and a semiconductor device. More specifically, the present invention relates to a semiconductor circuit including a semiconductor device operating as an output device and a driver circuit whose output terminal is connected to a control terminal of the semiconductor device for driving the semiconductor device; an inverter circuit of a semiconductor circuit; and a semiconductor device including the semiconductor circuit or the inverter circuit as described above formed on a semiconductor substrate. Background technique [0002] Recently, a plasma display has been widely used as a next-generation display having a wide screen and replacing a Brownian tube. Mainly used alternating current (AC) plasma displays display images by causing gas discharge to occur by alternately feeding a discharge sustain pulse voltage to panel electrodes. [0003] A three-electrode surface discharge...

AI Technical Summary

Problems solved by technology

Since a conventional driver circuit drives N at the same voltage as that at maximum load even at a light load as described above O 124 gate, thus causing a drastic output voltage change, and through N O The feedback capacitance of 124 causes noise which further causes overvoltage on VDD 123

However, the countermeasure described in Patent Document 1 cannot completely solve the above-mentioned problems

[0018] In the case where no next clock signal is input within a predetermined period of time after the last clock signal input, the method of reducing the gate voltage of the output device to prevent IC breakdown cannot allow sufficient gas discharge current to flow after the gas voltage is lowered

Therefore, the above-mentioned method results in a limitation on driving the plasma display panel

[0019] To eliminate the above problems, a more complex circuit configuration is proposed

However, it is difficult to adopt such a more complicated circuit configuration to a general circuit because a more complicated circuit configuration leads to an increase in cost and a detriment to higher circuit integration

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