Magnetic multilayer film with linear magnetoresistance effect and its application

A magnetoresistance, multi-layer film technology, applied in spin-exchange-coupled multi-layer films, magnetic films, magnetic field-controlled resistors, etc., can solve the problems of narrow magnetic field range, high signal amplification, and low sensitivity of magnetic field sensors. To achieve the effect of reducing costs and reducing manufacturing costs

Active Publication Date: 2007-05-23
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the low sensitivity of the magnetic field sensor using the Hall effect in the prior art, and the higher requirements for signal amplification; The magnetic field range is relatively narrow; the ordinary giant magnetoresistance effect has higher requirements on the signal processing in the back stage; and the giant magnetoresistance and tunneling resistance with linear response need to rely on permanent magnets to realize that the two magnetic electrodes are perpendicular to each other, and the cost is relatively low. high disadvantages, thereby providing a magnetic multilayer film with a linear response to a magnetic field, high sensitivity, and low manufacturing cost, and its use

Method used

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  • Magnetic multilayer film with linear magnetoresistance effect and its application
  • Magnetic multilayer film with linear magnetoresistance effect and its application
  • Magnetic multilayer film with linear magnetoresistance effect and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Magnetic multilayer films were prepared by magnetron sputtering. The substrate is Si / SiO 2 , the magnetic multilayer film structure is: Ru(5nm) / Pt(10nm) / [Co(0.4nm) / Pt(0.6nm)] 5 / Co(0.4nm) / Cu(2nm) / Co(3nm) / IrMn(12nm) / Ru(5nm). Magnetic multilayer film growth conditions: backup vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; Growth time: film thickness / growth rate.

[0042] Microfabrication is carried out by means of ultraviolet lithography and argon ion etching. UV lithography conditions: photoresist: S9918; exposure dose: 55mJ / cm 2 ; Exposure time: 17 seconds; Developer: MF319; Development time: 45 seconds; Baking time: 60 seconds; Baking temperature: 95 degrees. Argon ion etching conditions: power: 300 watts; argon pressure: 30 mTorr.

[0043] The graphic shape is an ellipse cylinder, the length of the major axis of the ellipse is 8 mi...

Embodiment 2

[0046] Magnetic multilayer films were prepared by magnetron sputtering. The substrate is Si / SiO 2 , the magnetic multilayer film structure is: Ru(5nm) / Pt(10nm) / [Co(0.4nm) / Pt(0.6nm)] 5 / Co(0.4nm) / Cu(2nm) / Co(3nm) / IrMn(12nm) / Ru(5nm). Magnetic multilayer film growth conditions: backup vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; Growth time: film thickness / growth rate.

[0047] The microfabrication is carried out by ultraviolet lithography and electron beam exposure combined with argon ion etching. UV lithography conditions: photoresist: S9918; exposure dose: 55mJ / cm 2 ; Exposure time: 17 seconds; Developer: MF319; Development time: 45 seconds; Baking time: 60 seconds; Baking temperature: 95 degrees. Electron beam exposure conditions: photoresist: PMMA950; exposure dose: 120mJ / cm 2 ; Developer: MIBK / IPA; Fixer: IPA Developing time: 40 seconds...

Embodiment 3～6

[0051] A magnetic multilayer film was prepared by the same method as in Example 1. The composition of the magnetic multilayer film is listed in Table 1.

[0052] Reality

[0053] The same microfabrication method as in Example 1 can be used to obtain a magnetic multilayer film with a magnetic field selectivity and a certain shape that responds linearly to the magnetic field.

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Abstract

The invention relates to a magnetic multilayer film with linear magnetic resistance effect, wherein it is self-rotation valve magnetic resistance made from the magnetic material whose magnetic torque is vertical to horizontal plane; it comprises one substrate deposited with buffer layer, the first magnetic layer, non-magnetic metal conductive layer or insulated layer, the second magnetic layer, antiferromagnetism nail layer and cover layer; the magnetic torque of first magnetic layer is upright; the magnetic torque of second magnetic layer is horizontal; the magnetic torque of first magnetic layer is vertical to the second magnetic layer. The inventive magnetic multilayer film can be used in magnetic sensor and magnetic head. And the magnetic sensor can realize measurement on vertical magnetic field, without changing sensor position and direction.

Description

technical field [0001] The invention relates to a magnetic multilayer film with linear magnetoresistance effect and its application. Background technique [0002] Usually, computer heads with giant magnetoresistance (GMR) and tunneling resistance (TMR) as core parts, and various magnetic field sensors including geomagnetic sensors, position sensors, speed sensors, acceleration sensors, etc., all use various The magnetic effect works, and requires the resistance (or voltage) to respond linearly with the change of the applied magnetic field, and requires the response curve to cross the zero point (the applied magnetic field is zero). [0003] Among them, the magnetic field sensor using the Hall effect (Hall effect) meets the above requirements, and because of its low price, most low-sensitivity magnetic field sensors currently on the market adopt this technology. However, in the Hall effect, the change of resistance (voltage) with the applied magnetic field is too small. Ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08G01R33/09G01D5/16G11B5/127H01F10/00H01F10/32
Inventor 魏红祥韩秀峰赵静杜关祥王磊王荫君
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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