Magnetic multilayer film with linear magnetoresistance effect and its application

A magnetoresistance, multi-layer film technology, applied in spin-exchange-coupled multi-layer films, magnetic films, magnetic field-controlled resistors, etc., can solve the problems of narrow magnetic field range, high signal amplification, and low sensitivity of magnetic field sensors. To achieve the effect of reducing costs and reducing manufacturing costs
CN1967891AActive Publication Date: 2007-05-23INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2007-05-23

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Abstract

The invention relates to a magnetic multilayer film with linear magnetic resistance effect, wherein it is self-rotation valve magnetic resistance made from the magnetic material whose magnetic torque is vertical to horizontal plane; it comprises one substrate deposited with buffer layer, the first magnetic layer, non-magnetic metal conductive layer or insulated layer, the second magnetic layer, antiferromagnetism nail layer and cover layer; the magnetic torque of first magnetic layer is upright; the magnetic torque of second magnetic layer is horizontal; the magnetic torque of first magnetic layer is vertical to the second magnetic layer. The inventive magnetic multilayer film can be used in magnetic sensor and magnetic head. And the magnetic sensor can realize measurement on vertical magnetic field, without changing sensor position and direction.
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Description

technical field

[0001] The invention relates to a magnetic multilayer film with linear magnetoresistance effect and its application. Background technique

[0002] Usually, computer heads with giant magnetoresistance (GMR) and tunneling resistance (TMR) as core parts, and various magnetic field sensors including geomagnetic sensors, position sensors, speed sensors, acceleration sensors, etc., all use various The magnetic effect works, and requires the resistance (or voltage) to respond linearly with the change of the applied magnetic field, and requires the response curve to cross the zero point (the applied magnetic field is zero).

[0003] Among them, the magnetic field sensor using the Hall effect (Hall effect) meets the above requirements, and because of its low price, most low-sensitivity magnetic field sensors currently on the market adopt this technology. However, in the Hall effect, the change of resistance (voltage) with the applied magnetic field is too small. Ther...

Claims

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