Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method for manufacturing the same

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of complicated etching processing, achieve the effect of easy adjustment and prevent large-scale

Inactive Publication Date: 2007-06-06
OKI ELECTRIC IND CO LTD
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, when etching the gate electrode into an island shape, it is necessary to etch WSi and polysilicon films, and there is a problem that the etching process becomes complicated due to the etching of multiple materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] First, Embodiment 1 based on the present invention will be described in detail using the drawings.

[0082] (1) Overall composition

[0083] FIG. 1 is a plan view showing the configuration of a semiconductor device 1000 according to the present invention. Fig. 7 (b) is the A-A sectional view in Fig. 1, Fig. 8 (c) is the C-C sectional view in Fig. 1, Fig. 12 is the B-B sectional view in Fig. 1. In the following description, the vertical direction on the paper surface is referred to as the y direction, and the horizontal direction on the paper surface is referred to as the x direction.

[0084] As shown in FIG. 1 , a semiconductor device 1000 has a memory cell area 1001 and a peripheral circuit area 1002 . The semiconductor device 1000 is a nonvolatile semiconductor device of a 1-cell 2-bit system having two charge storage portions for each memory cell. Active region 103 surrounded by field insulating film 102 is formed in memory cell region 1001 . In this active regi...

Embodiment 2

[0154] (1) Overall composition

[0155] The plan view of the semiconductor device 1000 of this embodiment is the same as that of the first embodiment except that the gate electrode is replaced by the polysilicon film 201 and the WSi film 202 instead of the polysilicon film 106 in FIG.

[0156] Fig. 18 is a cross-sectional view of A-A in Fig. 1, Fig. 19 is a cross-sectional view of B-B in Fig. 1, and Fig. 22(b) is a cross-sectional view of C-C in Fig. 1 .

[0157]As shown in FIG. 13, FIG. 18, and FIG. 22(b), the semiconductor device 1000 of the present embodiment has the same configuration as that of the first embodiment except that the gate structure of the memory cell transistor Tr1 is different. Hereinafter, the parts different from the configuration of the first embodiment will be described, and the description of the same configuration will be omitted. In addition, about the same structure as Example 1, the same code|symbol is attached|subjected.

[0158] In Embodiment 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a semiconductor device and a method for manufacturing the same in which a diffusion layer is used as a wiring from being formed in a larger size and to reduce the resistance value of a diffusion layer wiring therein. The semiconductor device includes a semiconductor substrate, a plurality of first wirings disposed above the semiconductor substrate along a first direction, a diffusion layer that is disposed on the surface of the semiconductor substrate so as to extend along a second direction perpendicular to the first direction and includes a plurality of first diffusion layer portions overlapping with the plurality of first wirings, a first conductive film that is disposed between adjacent first diffusion layer portions of the plurality of the first diffusion layer portions disposed along the plurality of first wirings, respectively, in a layer between the semiconductor substrate and the plurality of first wirings, and electrically coupled to the plurality of first wirings, a plurality of sidewall portions, each of which is formed on a lateral side of the first conductive film to be disposed between the first conductive film and its adjacent first diffusion layer portion so as to extend along the diffusion layer, and a second conductive film that has a predetermined thickness and is filled in spaces, each of which is interposed between two adjacent sidewall portions on each of the plurality of diffusion layer portions, so as to extend along each of the plurality of diffusion layer portions.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having a semiconductor element using a diffusion layer as a wiring and a manufacturing method thereof. Background technique [0002] Conventionally, each memory cell has two charge storage portions, that is, there is a nonvolatile semiconductor memory device of a two-bit system per cell. Such a nonvolatile semiconductor device is formed, for example, as follows. First, an active region surrounded by a field oxide film for element isolation is formed on a semiconductor substrate, and a gate oxide film, a polysilicon film, a tungsten silicide film (WSi film), an NSG film on the gate, and a nitrogen oxide film on the gate are formed on it. film. After that, using the resist as a mask, gate oxide film, polysilicon film, WSi film, NSG film on the gate, and nitride film on the gate are processed to simultaneously form ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L23/522H01L21/8247H01L21/768H10B69/00
CPCH01L29/7923H01L27/115H01L27/11573H01L27/105H01L27/11568H10B43/30H10B43/40H10B69/00H10B43/35
Inventor 汤田崇
Owner OKI ELECTRIC IND CO LTD