Metallization of dielectrics

A dielectric and metal technology, applied in the field of dielectric metallization, can solve the problems that silver cannot provide catalytic activity and precipitation effect, and achieve the effect of reducing the number of processing steps and high-efficiency methods

Active Publication Date: 2012-01-11
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But silver has some disadvantages
Silver often does not provide suitable catalytic activity, or may not achieve optimal precipitation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1 (comparative example)

[0035] The hexavalent chromium treatment solution was used at 70°C for the treatment of commercially available products from General Electric Co. TM MG37EP-BK4500) acrylonitrile butadiene styrene copolymer (ABS) sheet with dimensions of 8 cm x 9 cm was etched for 8 minutes to roughen the surface of the sheet. The chromium treatment solution contained 490 grams / liter (9 mole percent) chromic acid and 295 grams / liter (5.5 mole percent) sulfuric acid and water. The plates were then rinsed 4 times with deionized water to remove chromic acid.

[0036] Immerse the plate in Neutralizer PM at 45°C TM 954 (purchased from Rohm and Haas Company, Philadelphia, PA, USA) in aqueous solution for 3 minutes to reduce the chromium(VI) to chromium(III), followed by rinsing with deionized water.

[0037] The plate was then dipped in Cuposit Catalyst from Rohm and Haas Company TM 44 (stannous chloride-palladium catalyst), the plate was activated for ...

Embodiment 2

[0050] at room temperature, on Crownplate TM ABS copolymers measuring 8 cm x 9 cm were treated for 1 minute in a Conditioner PM-920 (available from Rohm and Haas Company). The plate was then rinsed with deionized water for 1 minute.

[0051] The panels were then conditioned and activated with an aqueous solution containing 5 g / L silver nitrate, 30 g / L ammonium cerium (IV) nitrate and 600 mL / L (95%) nitric acid. The pH of the modifier-activator composition is less than 1. ABS sheets were conditioned and activated at 65°C for 15 minutes. The plate was then rinsed with deionized water for 2 minutes.

[0052] The conditioned and activated panels were electrolessly plated with a copper layer using the aqueous electroless plating baths shown in Table 4 below.

[0053] Table 4

[0054] composition

[0055] Electroless copper plating was performed at 70°C for 20 minutes to form a 1 micron thick copper layer on the plate. Rinse the copper-plated plate with dilute sulfu...

Embodiment 3

[0063] An 8 cm x 9 cm ABS sheet was immersed in a conditioner-activator solution containing 10 g / L silver nitrate, 50 g / L cerium (IV) ammonium nitrate and 350 mL / L (95%) nitric acid. The pH of the etch-activator composition is less than 1. The ABS sheet was conditioned and activated at 65°C for 20 minutes. The plate was then rinsed with deionized water for 1 minute.

[0064] The ABS sheet was then immersed in an electroless copper plating bath having the composition shown in Table 6 below:

[0065] Table 6

[0066] composition

[0067] Electroless copper plating was performed at 70° C. for 10 minutes to form a 0.5 μm thick copper adhesion layer.

[0068] The copper plated panels were then plated with nickel to a thickness of 1 mil using a nickel plating bath having the composition shown in Table 7 below:

[0069] Table 7

[0070] composition

[0071] Under the conditions of 3ASD and 60°C, electrolytic nickel plating was performed for 1 hour. It is expec...

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Abstract

A composition and method are disclosed. The composition both conditions and activates a dielectric material for metal deposition. The metal may be deposited on the dielectric by electroless methods. The metallized dielectric may be used in electronic devices.

Description

technical field [0001] The present invention relates to the metallization of dielectrics. More specifically, the present invention relates to the metallization of dielectrics using a composition and method to promote the adhesion of metals to the dielectrics and to catalyze the metallization of the dielectrics. Background technique [0002] Various methods of forming metal patterns on dielectrics are known. These methods include the use of the following methods, alone or in various combinations: positive and negative printing methods, positive and negative etching techniques, electroplating and electroless plating. Background technique [0003] Dielectric substrates are metallized as part of surface treatment using many conventional methods using corrosive oxidizing agents such as chromic acid prior to conditioning, catalysis, and electroless metal deposition steps. However, these processes are not only harmful to workers and the environment, but also lengthy and time-co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/31C23C18/18C23C28/02
CPCC25D5/54C23C18/48C23C18/1851C23C18/1653C23C18/208C23C18/30Y10T428/31678C23C18/16C23C18/54C23C18/04
Inventor F·斯卡拉格林诺W·萨默N·D·布朗K·王
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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