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Method for forming a pattern and method of manufacturing semiconductor device

a semiconductor device and pattern technology, applied in the direction of photomechanical equipment, instruments, photomechanical treatment, etc., can solve the problems of too limited process margin (or tolerance) for exposure such as tolerance, focusing tolerance, etc., and it is difficult to secure a sufficient film thickness of resist film

Inactive Publication Date: 2005-07-14
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach improves the etching resistance and dimensional controllability of the pattern transfer process, enabling the formation of fine patterns with reduced etch bias and maintaining the integrity of the semiconductor wafer, comparable to films formed by more expensive physicochemical methods.

Problems solved by technology

Nowadays however, due to a trend to further increase the fineness in dimension of LSI, the resolution for realizing such a fineness of LSI is required to be that of the exposure wavelength or less, so that the process margin (or tolerance) for exposure such as the tolerance in quantity of exposure, focusing tolerance, etc. is getting too limited to realize such a fineness of LSI.
However, the thinner resist process would give rise to another problem that it is difficult to secure a sufficient film thickness of resist film which is necessary for suitably etching the working film.
However, since this spin-on glass is formed into a film by a coating method, it is difficult to obtain a film of high density as compared with the films to be obtained by a physiocochemical method such as a CVD method or a sputtering method.
Therefore, the film to be formed using the spin-on glass is poor in etching resistance as compared with a silicon oxide film formed by a physicochemical method, so that etch bias is most likely to be generated on the occasion of etching work of the working film.

Method used

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  • Method for forming a pattern and method of manufacturing semiconductor device
  • Method for forming a pattern and method of manufacturing semiconductor device
  • Method for forming a pattern and method of manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0043]FIGS. 1A to 1F respectively shows a cross-sectional view illustrating in step-wise one example of forming a pattern according to this Embodiment 1.

[0044] First of all, as shown in FIG. 1A, a mask 3 is formed on the surface of a working film (i.e. a film to be worked) 2 formed on a wafer. The working film 2 according to this embodiment can be formed directly or through a thin film such as an interlayer insulating film on the surface of a semiconductor wafer (not shown) having element regions (not shown) formed therein. Therefore, the reference numeral 1 in FIG. 1A represents a wafer or a film formed immediately underneath the working film 2. As for the material of the working film 2, there is not any particular limitation, so that it may be optionally selected as long as it is capable of being etched at a high selectivity relative to silicon oxide. For example, the working film 2 may be a wiring material such as aluminum, aluminum silicide, copper, tungsten, titanium, titanium...

embodiment i-1

[0075] First of all, as the working film 2, an interlayer insulating film having a thickness of 500 nm and comprising polyarylene ether as a main component was formed on the surface of silicon wafer 1 having element regions (not shown) formed therein.

[0076] Then, by the procedures shown in the following items (S1)-(S4), the mask shown in FIG. 1A was formed on the surface of the working film 2.

[0077] (S1) 10 g of polysilazane (average molecular weight: 2,000) employed as a silicon compound and represented by the aforementioned chemical formula (1-37) was mixed with 90 g of anisole to prepare a solution of masking material. This solution was then spin-coated on the surface of the working film 2.

[0078] (S2) 9.99 g of polysilazane (average molecular weight: 2,000) employed as a silicon compound and represented by the aforementioned chemical formula (1-37), 0.01 g of a compound employed as an acid-generating agent and represented by the chemical formula shown below, and 90 g of anisol...

embodiment i-2

[0105] By the same procedures as explained in Embodiment I-1, a mask was formed on a working film. Thereafter, each of the masks was exposed to the irradiation of ultraviolet ray having a wavelength of 157 nm by using an excimer lamp in an O2 atmosphere and under the conditions wherein the exposure dose was set to 100 mJ / cm2 and the vacuum degree was set to 15 mTorr, thereby enabling oxygen to substitute for the nitrogen contained in the mask.

[0106] The quantity of Si—N bond and of Si—O bond in the mask, and the density of mask after the aforementioned irradiation of electron beam were investigated in the same manner as in Embodiment I-1, the results being shown in the following Table 2.

TABLE 2Density (g / cm3)BeforeEtchSi—NSi—Osubsti-Afterbias (nm)SelectivitybondbondtutedsubstitutedY-XY-Zratio(S1)0.0520.31.872.23−2−48.7(S2)0.0520.31.872.23+2−48.7(S3)0.0520.31.872.23+1−48.7(S4)0.0520.31.872.23+1−48.7

[0107] As shown in Table 2, in the same manner as in Embodiment I-1, the reaction o...

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Abstract

Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Applications No. 2001-103727, filed Apr. 2, 2001; and No. 2001-143065, filed May 14, 2001, the entire contents of both of which are incorporated by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] This invention relates to a method of forming a pattern and to a method of manufacturing a semiconductor device. In particular, this invention relates to a method of forming a fine pattern on a wafer substrate. [0004] 2. Description of the Related Art [0005] The method of manufacturing a semiconductor element involves a patterning step wherein a plurality of materials are deposited on the surface of silicon wafer to form a thin film as a working film (i.e. a film to be worked, the same hereinafter), which is then formed into a desired pattern. In the patterning process of a working film, first of all, a photosensitive ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/00G03F7/039G03F7/075G03F7/09
CPCG03F7/0035G03F7/094G03F7/0757G03F7/0392
Inventor SATO, YASUHIKOONISHI, YASUNOBU
Owner KK TOSHIBA