Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Processing apparatus

a technology of processing apparatus and processing chamber, which is applied in the direction of electrical apparatus, hot plate heating arrangement, electric discharge tube, etc., can solve the problems of difficult to attach the lamp to the processing chamber for mechanical reasons, difficult to control the temperature independently of the plasma, and the inability to make space for the lamp within the processing chamber, etc., to achieve the effect of not making the structure inside the table complicated

Inactive Publication Date: 2005-10-27
TOKYO ELECTRON LTD
View PDF4 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007] The present invention was made in view of the disadvantages of the aforementioned conventional techniques. It is an object of the present invention to provide a processing apparatus which can control the temperature of a substrate to be processed on a table at a desired temperature by a heating method that does not complicate the structure inside the table and requires no special heating arrangement.
[0014] In a preferred embodiment of the present invention, a second filter circuit for allowing the first radio-frequency radiation from the first radio-frequency power supply to pass therethrough and cutting off the second radio-frequency radiation from the second radio-frequency power supply is provided in the middle of the second feed line so as to be closer to the one output terminal of the first radio-frequency power supply than a second node at which the third feed line and the second feed line are connected. By providing the second filter circuit as described above, it is possible to protect the first radio-frequency power supply against the second radio-frequency radiation for radio-frequency bias and use the second feed line for both the first and second radio-frequency radiations. It is preferable that a third filter circuit for allowing the second radio-frequency radiation from the second radio-frequency power supply to pass therethrough and cutting off the first radio-frequency radiation from the first radio-frequency power supply be provided in the middle of the third feed line. That third filter circuit can protect the second radio-frequency power supply against the first radio-frequency radiation for heating.
[0018] It is preferable that a second filter circuit for allowing the first radio-frequency radiation from the first radio-frequency power supply to pass therethrough and cutting off the third radio-frequency radiation from the third radio-frequency power supply be provided in the middle of the second feed line. That second filter circuit can protect the first radio-frequency power supply against the second radio-frequency radiation for plasma generation.
[0021] According to the processing apparatus of the present invention, the temperature of the substrate to be processed on the table can be controlled at a given temperature by a heating method that does not make the structure inside the table complicated and requires no special heating arrangement, due to the aforementioned structures and operations.

Problems solved by technology

However, the plasma-heat-input method has the disadvantage that the substrate temperature is sensitive to change in the plasma and therefore controlling temperature independently of the plasma is difficult.
The lamp heating method has the disadvantage that it is difficult to attach the lamp to the processing chamber for mechanical reasons, or for reasons of space.
It is therefore usual that space for the lamp cannot be made within the processing chamber.
This complicates the structure of the inside of the table and increases its fabrication costs.
The structure inside the table becomes very complicated, and expensive to fabricate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing apparatus
  • Processing apparatus
  • Processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0026]FIG. 1 shows the structure of a plasma etching apparatus according to the present invention. The plasma etching apparatus of FIG. 1 is a parallel-plate type plasma etching apparatus and includes, for example, a cylindrical chamber (processing chamber) 10 formed of aluminum which has had surfaces alumite treatment (anodization). The chamber 10 is grounded for safety.

[0027] On the bottom of the chamber 10, a columnar support 14 is arranged on an insulation plate 12 formed of ceramic or the like. The support 14 is formed of aluminum, for example. A disc-like susceptor 16 that is formed of aluminum, for example, is provided on the support 14. The susceptor 16 serves as both a table and a lower electrode. A substrate to be processed, for example, the semiconductor wafer W, is placed on the susceptor 16.

[0028] An electrostatic chuck 18 for holding the semiconductor wafer W with a Coulomb force or a Johnson-Rahbeck force is provided on the upper surface of the susceptor 16. The elec...

second embodiment

[0049] In the second embodiment, a disc-like susceptor lower electrode 92 formed of aluminum, for example, is arranged at the bottom of the chamber 10 via the insulation plate 12. A susceptor 94 formed of a dielectric material such as ceramic, for example, is provided on the susceptor lower electrode 92. A susceptor upper electrode 96, in the form of a plate or sheet, is provided inside the susceptor 94 so as to be close to the upper surface (substrate-placed surface) of the susceptor 94. The material for the susceptor upper electrode 96 is preferably high-melting point metal such as tungsten, molybdenum, or nickel.

[0050] A radio-frequency power supply 98 causes the susceptor 94, formed of a dielectric material, to generate heat by radio-frequency heating. This allows control of the temperature of the semiconductor wafer W on the susceptor 94 in the heating method. One output terminal of the radio-frequency power supply 98 is electrically connected via a feed line 100 to the suscept...

third embodiment

[0053] In the third embodiment, a coil 110 is provided under the susceptor 94, concentrically with the susceptor 94 or the susceptor electrode 96. A radio-frequency power supply 112 causes the electrode 96 inside the susceptor 94 to generate heat by radio-frequency heating in order to control the temperature of the semiconductor wafer W on the susceptor 94 in the heating method. The radio-frequency power supply 112 is electrically connected at its output terminal to the coil 110 via a feed line 114 and preferably outputs radio-frequency radiation of a frequency in a range from 1 kHz to 10 MHz, for example, radiation of 2 kHz. When the radio-frequency current from the radio-frequency power supply 112 flows through the coil 110, a radio-frequency electromagnetic field J formed by the coil 110 penetrates the susceptor electrode 96, causing the generation of an eddy current in the susceptor electrode 96. The thus generated eddy current causes the susceptor electrode 96 to generate heat,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Frequencyaaaaaaaaaa
Temperatureaaaaaaaaaa
Poweraaaaaaaaaa
Login to View More

Abstract

The temperature of a substrate to be processed on a table can be controlled to be at a desired temperature by using a heating method that simplifies the structure inside the table and requires no special heating arrangement. An electrostatic chuck provided on an upper surface of a susceptor includes an electrode portion formed by a conductive plate or film and a pair of dielectric or insulation sheets sandwiching the electrode portion therebetween. A direct-current voltage from a direct-current power supply is applied to the electrode portion via a feed line for electrostatic absorption. A radio-frequency power supply causes the electrode portion of the electrostatic chuck to heat by resistance heating. This affects the temperature of the semiconductor wafer on the susceptor in the heating method, thereby providing control over its temperature. One output terminal of the radio-frequency power supply is electrically connected to the susceptor via another feed line, while the other output terminal is connected to the ground potential. The radio-frequency power supply outputs radio-frequency radiation of 10 kHz, for example, with a power that is preferably variable and controllable.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a processing apparatus for performing a desired process on a substrate to be processed on a table in a processing chamber. More particularly, the present invention relates to a processing apparatus that employs a method for heating the substrate on the table. [0003] 2. Description of the Related Art [0004] In a single-wafer process, a substrate to be processed is placed on a table in a processing chamber that is in a vacuum state. Typically this process comprises steps such as etching, deposition, oxidation, and sputtering performed during the manufacturing of semiconductor devices or FPDs (Flat Panel Displays). Process gas is then supplied to the inside of the processing chamber while the temperature of the substrate is kept constant on the table. In that process, plasma is often used to accelerate ionization, chemical reaction or the like of the process gas. [0005] The methods for ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/00H05B3/68H01J37/32H01L21/00H01L21/3065H01L21/68H01L21/683
CPCH01J37/32082H01J37/32174H01L21/67109H01L21/67069H01J37/32577
Inventor HIGASHIURA, TSUTOMU
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com