III/V-semiconductor

Abstract

The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III / V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

Description

FIELD OF THE INVENTION [0001] The invention relates to a new III / V semiconductor, a semiconductor layer consisting of such a semiconductor, a monolithically integrated semiconductor structure comprising such a semiconductor layer, the uses of such a semiconductor or of such a semiconductor layer, and a method for the production of such a semiconductor layer. BACKGROUND OF THE INVENTION AND PRIOR ART [0002] In the field of computer technology, there is a continuously growing demand for higher processing and signal conduction capacities in conjunction with a high reliability and flexibility. In the past, the chip technology has made a rapid progress with regard to integration density and working speeds or cycle frequencies. With this trend further advancing, problems are coming up for the connection of fast chips. Critical aspects in conjunction with high-speed connections are reliability, cost, on-chip driver size and performance, crosstalk, signal distortions and lack of flexibility...

AI Technical Summary

Problems solved by technology

With this trend further advancing, problems are coming up for the connection of fast chips.

Critical aspects in conjunction with high-speed connections are reliability, cost, on-chip driver size and performance, crosstalk, signal distortions and lack of flexibility in the chip design.

Silicium is however an indirect semiconductor, and the production of efficient optoelectronic components using the Si technology is consequently hardly possible.

If now contacts between layers on the basis of the Si technology and layers on the basis of the technology of the III / V semiconductor are to be made, it is problematic that the lattice constants of the respective materials are different (this also applies to GaP substrates instead of Si substrates).

Such dislocations however disturb the function of the complete semiconductor structure to a substantial degree, the more since the functional layer thicknesses are today in the order of atomic dimensions.

If then the semiconductor structure cools down to ambient temperature, the differences of the lattice constants caused by the different thermal expansion coefficients will lead to the above stresses and dislocations.

This technology is however not suitable for high-integrated circuits because of the lacking controllability of microcracks in atomic scales.

This technology, too, is not suitable for applications in high-integrated circuits.

In fact, such layers are only suitable for InP substrates and form undesirably many dislocations and faults on Si or GaP substrates.

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