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Cleaning method used in removing contaminants from the surface of an oxide or fluoride comprising a group III B metal

a cleaning method and fluoride technology, applied in the direction of superimposed coating process, crystal growth process, transportation and packaging, etc., can solve the problems of insufficient corrosion resistance, insufficient useful in preventing, and insufficient compression of coating, etc., to achieve excellent plasma corrosion resistance

Inactive Publication Date: 2007-06-14
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a method for protecting aluminum alloy substrates and components from corrosion in plasma processing chambers. The method involves applying a coating made of yttrium oxide or a combination of yttrium oxide and aluminum oxide onto the surface of the substrate. The coating is placed in compression, which helps prevent mobile impurities from migrating from the substrate and causes the coating to have better resistance to corrosion. The coating can be applied using various methods such as thermal spray, plasma discharge spray, sputtering, or chemical vapor deposition. The thickness of the coating should be at least about 4 mils, and it should be pre-roughened before application. The method can provide better protection against corrosion and improve the machinability of the substrate.

Problems solved by technology

When the upper surface of the aluminum alloy substrate to which the coating is applied is at a temperature of less than about 150-200° C., the coating will not be placed under adequate compression upon cooling to provide the desired corrosion resistance, and will not be sufficiently useful in acting to prevent particulates in the aluminum alloy substrate from migrating into the coating.

Method used

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  • Cleaning method used in removing contaminants from the surface of an oxide or fluoride comprising a group III B metal
  • Cleaning method used in removing contaminants from the surface of an oxide or fluoride comprising a group III B metal
  • Cleaning method used in removing contaminants from the surface of an oxide or fluoride comprising a group III B metal

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Embodiment Construction

[0040] As a preface to the detailed description, it should be noted that, as used in this specification and the appended claims, the singular forms “a”, “an”, and “the” include plural referents, unless the context clearly dictates otherwise.

[0041] Disclosed herein is a method of applying a plasma-resistant coating on an aluminum or an aluminum alloy substrate. The present method is particularly useful for applying a plasma-resistant coating to a substrate which comprises an aluminum alloy of the 2000 series or the 5000 through 7000 Series. Because of its greater malleability, 2000 series aluminum is particularly preferred when fabricating parts and components having complex shapes.

[0042] The plasma-resistant coating comprises an oxide of Y, Sc, La, Ce, Eu, Dy, or the like, or a fluoride of one of these metals, or yttrium-aluminum-garnet (YAG). An aluminum alloy coated with the coating of the invention applied by the method of the inventions shows excellent plasma corrosion-resista...

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Abstract

Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.

Description

[0001] The present application is a divisional application of U.S. application Ser. No. 10 / 898,113, filed Jul. 22, 2004, and titled “Clean, Dense Yttrium Oxide Coating Protecting Semiconductor Processing Apparatus”, which is presently pending, and which is a continuation-in-part application of U.S. application Ser. No. 10 / 075,967, filed Feb. 14, 2002, and titled “Yttrium Oxide Based Surface Coating For Semiconductor IC Processing Vacuum Chambers”, which issued as U.S. Pat. No. 6,776,873 on Aug. 17, 2004.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to equipment and apparatus used in the manufacture of electronic devices including semiconductor devices, MEM devices, and other devices used in data manipulation, storage, and display, for example and not by way of limitation. In particular, the invention pertains to the use of yttrium oxide-comprising protective layers which are applied to a surface of apparatus, such as process chambe...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/00C23C14/00B05D1/08C23C16/44C23C28/00
CPCC23C16/4404C23C28/042Y10T428/26Y10S134/902C30B35/00C23C4/11C23C4/18C23C14/00
Inventor WANG, XIKUNXU, LISUN, JENNIFER Y.
Owner APPLIED MATERIALS INC
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