Ferroelectric capacitor and method for fabricating the same
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First Embodiment
[0027]A ferroelectric capacitor and its fabrication method according to a first embodiment of the present invention will be described.
[0028]FIGS. 1A to 1C and 2A and 2B are sectional views showing a method for fabricating a ferroelectric capacitor according to the first embodiment of the present invention in the order of its fabrication process steps.
[0029]Referring to FIG. 1A, on a semiconductor substrate 101 with memory cell transistors (not shown) and the like formed thereon, a first interlayer insulating film 102 is formed which is made of, for example, a BPSG (SiO2 with B, P, and the like added therein) film. Subsequently, the first interlayer insulating film 102 is formed with a contact plug 103 of tungsten, polysilicon, or the like whose bottom end reaches the top surface of the semiconductor substrate 101. Then, a lower electrode 104 made by sequentially stacking a barrier layer and a noble metal layer in this order is formed on the first interlayer insulatin...
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Second Embodiment
[0052]A second embodiment of the present invention will describe a fabrication method of a ferroelectric capacitor capable of providing an excellent percentage of polarization reversal relative to the thickness of a ferroelectric film as described above in the first embodiment. In the second embodiment, the description is divided according to materials constituting the ferroelectric film.
—Ferroelectric Film Made of SBTN—
[0053]FIGS. 5A to 5C and 6A and 6B are sectional views showing a fabrication method of a ferroelectric capacitor made of SBTN according to the second embodiment of the present invention in the order of its fabrication process steps.
[0054]Referring to FIG. 5A, on a semiconductor substrate 201 with memory cell transistors (not shown) and the like formed thereon, a first interlayer insulating film 202 is formed which is made of, for example, a BPSG (SiO2 with B, P, and the like added therein) film. Subsequently, the first interlayer insulating film 202 ...
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Abstract
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