Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method and manufacturing apparatus of magnetoresistance elements

a manufacturing apparatus and technology of magnetoresistance elements, applied in vacuum evaporation coatings, cathode sputtering applications, coatings, etc., can solve the problems that conventional sputtering apparatuses cannot cope with reproducible formation of high quality films, and achieve high characteristic gmr elements, improve film flatness, and improve production yield

Inactive Publication Date: 2009-06-04
CANON ANELVA CORP
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a manufacturing method and apparatus for a magnetoresistance element, specifically GMR and TMR elements, that can enhance the magnetic characteristics like magneto-resistance ratio (MR ratio) and improve reproducibility of each film. The method involves forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3 Pa or less in the vicinity of a substrate using a low-pressure sputtering apparatus. The non-magnetic intermediate layer can be a non-magnetic conductive layer or a tunneling barrier layer, and the film thickness uniformity and flatness can be improved by controlling the sputtering conditions such as the pressure and the gas introduction mechanism. The use of a low-pressure sputtering apparatus reduces the amount of process gas flowing towards the substrate and improves the stability of the sputtering discharge. The MR ratio, film thickness uniformity, and film flatness can be greatly improved by forming at least one thin film at a pressure of 8.0×10−3 Pa or less.

Problems solved by technology

The conventional sputtering apparatuses cannot cope with the reproducible formation of high quality films when the films to be stacked become as thin as one-atom or several-atom thickness.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method and manufacturing apparatus of magnetoresistance elements
  • Manufacturing method and manufacturing apparatus of magnetoresistance elements
  • Manufacturing method and manufacturing apparatus of magnetoresistance elements

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0054]As an example of manufacturing methods of this invention, a method used for manufacturing a GMR element having a multilayered structure shown in FIG. 9A will be explained.

[0055]FIG. 1 is an apparatus suitably used for manufacturing the magnetoresistance element shown in FIG. 9A. The manufacturing apparatus is composed of a first sputtering chamber 22 for forming a buffer layer Ta and an anti-ferromagnetic layer PtMn, a second sputtering chamber 23 for forming a pinned magnetic layer (CoFe / Ru / CoFe), a low-pressure sputtering chamber 20 for forming a non-magnetic intermediate layer Cu at a low pressure of 10−3 Pa or less, a third sputtering chamber 24 for forming a free magnetic layer (CoFe / NiFe) and a passivation layer Ta, a load lock chamber 21 which stores cassettes holding a plurality of substrates, and a transfer chamber 27 in which a robot 28 is installed to transfer a substrate. The chambers 20-24 are connected through gate valves 26 to the periphery of the transfer chamb...

embodiment 2

[0077]In this embodiment, a manufacturing method of a TMR element shown in FIG. 9B will be explained by referring to a manufacturing apparatus shown in FIG. 2 which is preferably used for manufacturing the TMR element.

[0078]The manufacturing apparatus is composed of a first sputtering chamber 22 for forming a buffer layer Ta and an anti-ferromagnetic layer PtMn, a second sputtering chamber 23 for forming a pinned magnetic layer (CoFe / Ru / CoFe), a low-pressure sputtering chamber 20 for forming an aluminum film at a low pressure of 8.0×10−3 Pa or less for a tunnel barrier layer use, an oxidation chamber 25 to oxidize the aluminum film to form a tunnel barrier layer Al2O3, a third sputtering chamber 24 for forming a free magnetic layer (CoFe / NiFe) and a passivation layer Ta, a load lock chamber 21 which stores cassettes holding a plurality of substrates, and a transfer chamber 27 in which a robot 28 is installed to transfer a substrate. These chambers 20-25 are connected through gate va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pressureaaaaaaaaaa
thicknessaaaaaaaaaa
pressureaaaaaaaaaa
Login to View More

Abstract

A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application claims the priority of JP 2004-272230, filed in Japan on Sep. 17, 2004, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]The present invention relates to a manufacturing method and a manufacturing apparatus of a magnetoresistance element, and in particular to the manufacturing method of magnetoresistance elements having excellent magnetic characteristics like a magneto-resistance ratio (MR ratio).DESCRIPTION OF RELATED ART[0003]Magnetoresistive elements such as a Giant Magneto Resistance (GMR) element and a Tunnel Magnetic Resistance (TMR) element have a multilayered structure which is composed of an anti-ferromagnetic layer, a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer to have a large magneto-resistance ratio (MR ratio), and therefore are practically used for high density magnetic devices such as a magnetic head and a nonvol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): C23C14/34
CPCB82Y25/00B82Y40/00C23C14/228H01L43/12H01F41/18H01F41/302C23C14/35H10N50/01
Inventor KITADA, TORUWATANABE, NAOKITAKAGI, SHINJIFURUKAWA, SHINJI
Owner CANON ANELVA CORP