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Magnetoresistive element and method of manufacturing the same

Inactive Publication Date: 2009-07-30
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0039]The inventors also found that the magnetoresistive element realizing a high MR ratio as described above can be manufactured by improving a method of forming the functional layer (SF layer).

Problems solved by technology

As a result, a magnetic field signal from the recording medium becomes very weak to make a conventional read head difficult to distinguish between “0” and “1”.
However, it came to be found that the conventional spin filter layer is insufficient in the difference between up-spin electron permeation and down-spin electron permeation and there is room to enable higher MR ratio.

Method used

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  • Magnetoresistive element and method of manufacturing the same
  • Magnetoresistive element and method of manufacturing the same
  • Magnetoresistive element and method of manufacturing the same

Examples

Experimental program
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example 1

[0146]The magnetoresistive element shown in FIG. 1B was prepared in this example. The structure of the magnetoresistive element in Example 1 is as follows:

Lower electrode 11

Underlayer 12: Ta [1 nm] / Ru [2 nm]

Pinning layer 13: Ir22Mn78 [7 nm]

Pinned layer 14: Co90Fe10 [4 nm] / Ru [0.85 nm] / Co90Fe10 [4 nm]

Spacer layer (all metal) 16: Cu [3 nm]

Lower free layer 181: Co90Fe10 [2 nm]

SF layer 21: (nitride of Fe80Co20 [0.4 nm])×5 layers prepared by the method in FIGS. 4A to 4E

Upper free layer 182: Co90Fe10 [2 nm]

Cap layer 19

Upper electrode 20.

[0147]Now, a method of forming the free layer including the SF layer after the layers to the spacer layer 16 are deposited will be described. When the free layer including the SF layer is formed as in this example, a magnetic layer having half the thickness of the usual free layer is deposited and then the SF layer 21 is formed thereon. In this example, Co90Fe10 of 2 nm in thickness was deposited as the lower free layer 181.

[0148]Then, in the step of FIG. ...

example 2

[0150]A magnetoresistive element was prepared in the same manner as in Example 1 except that (nitride of Co64Fe16B20 [0.4 nm])×5 layers prepared by the method in FIGS. 4A to 4E was used as the SF layer 21.

example 3

[0151]A magnetoresistive element was prepared in the same manner as in Example 1 except that (nitride layer of Fe50Co50 [0.4 nm])×5 layers prepared by the method in FIGS. 4A to 4E was used as SF layer 21.

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Abstract

A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2008-019366, filed Jan. 30, 2008, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a magnetoresistive element which detects magnetism by passing a sense current in a direction perpendicular to the plane of a magnetoresistive film, and a method of manufacturing the same.[0004]2. Description of the Related Art[0005]At present, magnetic recording apparatuses such as HDD (hard disk drive) are used in applications of personal computers, portable audio / video players, video cameras and car navigation system. A further increase in recording capacity of HDD is desired with the expansion of applications. For increasing recording capacity without increasing the volume of HDD, further improvement in recording density per unit area ...

Claims

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Application Information

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IPC IPC(8): G11B5/48B05D1/38H01L29/82
CPCB82Y10/00B82Y25/00G01R33/04G01R33/093G11B5/3906H01L43/12G11C11/16H01L27/228H01L43/08H01L43/10G11B2005/3996G11C11/161G11C11/1673G11C11/1675H10B61/22H10N50/10H10N50/01H10N50/85G11B5/39
Inventor FUKUZAWA, HIDEAKIMURAKAMI, SHUICHIYUASA, HIROMIFUJI, YOSHIHIKO
Owner KK TOSHIBA
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