Solid-state image pickup device

Inactive Publication Date: 2009-10-29
EPSON IMAGING DEVICES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]An advantage of some aspects of the invention is that it provides a solid-state image pickup device and a manufacturing method thereof capable of providing reliable electrical conn

Problems solved by technology

However, since a reduction optical system is difficult to implement in imaging of the radioactive rays, the imaging is necessarily performed at the same magnification.
Therefore, there is a problem that the forming region of the photoelectric conversion element is reduced, and thus, the sensitivity decreases.
Therefore, there is

Method used

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Experimental program
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first embodiment

Structure

[0047]FIGS. 4A and 4B are a top plan view and a cross-sectional view of one of the pixels 100a of the solid-state image pickup device 100 according to a first embodiment of the invention, respectively, in which FIG. 4B is a cross-sectional view of the solid-state image pickup device 100 taken along the lines IVB-IVB in FIG. 4A. In FIG. 4A, the gate lines 3a and thin films or the like formed simultaneously with them are denoted by thin solid lines, the source lines 6a and thin films or the like formed simultaneously with them are denoted by dashed-dotted lines, semiconductor films (active layers) are denoted by thin and short dotted lines, the first electrode 81a of the photoelectric conversion element 80 is denoted by thin and long dotted lines, a semiconductor layer 88 of the photoelectric conversion element 80 is denoted by thick solid lines, and the second electrode 85a of the photoelectric conversion element 80 is denoted by thick and long dotted lines.

[0048]As illustra...

second embodiment

[0065]FIGS. 7A and 7B are a top plan view and a cross-sectional view of one of the pixels 100a of a solid-state image pickup device 100 according to a second embodiment of the invention, respectively, in which FIG. 7B is a cross-sectional view of the solid-state image pickup device 100 taken along the lines VIIB-VIIB in FIG. 7A. Since a basic structure of the present embodiment is the same as that of the first embodiment, the same or corresponding portions will be denoted by the same reference numerals, and redundant description thereof will be omitted.

[0066]In the solid-state image pickup device 100 illustrated in FIGS. 7A and 7B, similar to the first embodiment, the gate lines 3a and the source lines 6a extend in mutually intersecting directions on the substrate 10, and the pixel 100a is formed at each of the intersections of the gate lines 3a and the source lines 6a. Moreover, the bias line 5a extends to be parallel with the source lines 6a. Furthermore, in the present embodiment...

modified embodiment of second embodiment

[0073]FIGS. 8A and 8B are a top plan view and a cross-sectional view of one of the pixels 100a of a solid-state image pickup device 100 according to a modified embodiment of the second embodiment of the invention, respectively, in which FIG. 8B is a cross-sectional view of the solid-state image pickup device 100 taken along the lines VIIIB-VIIIB in FIG. 8A. Since a basic structure of the present embodiment is the same as that of the first and second embodiments, the same or corresponding portions will be denoted by the same reference numerals, and redundant description thereof will be omitted.

[0074]Although similar to the second embodiment, the solid-state image pickup device 100 illustrated in FIGS. 8A and 8B is an example in which the storage capacitor 90 is formed using the capacitance line to be electrically connected to be parallel with the photoelectric conversion element 80, in the present embodiment, the capacitance line 6e is formed simultaneously with the source line 6a. T...

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Abstract

A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.

Description

CROSS REFERENCES TO RELATED APPLICATIONS[0001]The entire disclosure of Japanese Patent Application Nos. 2008-112113, filed Apr. 23, 2008 and 2008-319271, filed Dec. 16, 2008 are expressly incorporated by reference herein.BACKGROUND[0002]1. Technical Field[0003]The present invention relates to a solid-state image pickup device for converting incident light into electrical signals and to a manufacturing method thereof.[0004]2. Related Art[0005]In medical image diagnosis or non-destructive inspection, imaging is performed using radioactive rays such as X rays. However, since a reduction optical system is difficult to implement in imaging of the radioactive rays, the imaging is necessarily performed at the same magnification. Therefore, the medical image diagnosis or the non-destructive inspection requires a large imaging surface, and thus, a solid-state image pickup device having a variety of type of thin films deposited on a glass substrate or the like so that a plurality of pixels is...

Claims

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Application Information

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IPC IPC(8): H01L31/00G01T1/24H01L27/146H04N5/335H04N5/369H04N5/374
CPCH01L27/14658
Inventor ISHIDA, YUKIMASASATO, TAKASHIYAMAZAKI, YASUSHI
Owner EPSON IMAGING DEVICES CORP
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