Process And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned

Abstract

A method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder, is provided. The layer includes of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy.

Description

PRIOR APPLICATIONS[0001]This application is a divisional patent application of U.S. patent application Ser. No. 11 / 262,874 for a “Process And Apparatus For Dispositing Semiconductor Layers” filed on Oct. 31, 2005, which is a continuation of International Patent Application No. PCT / EP2004 / 002994 filed on Mar. 22, 2004, which designates the United States and claims priority of German Patent Application No. 10320597.7 filed on Apr. 30, 2003.FIELD OF THE INVENTION[0002]The invention relates to a process for depositing at least one layer, in particular semiconductor layer, on at least one substrate carried by a substrate holder in a process chamber of a reactor, the layer consisting of at least two material components which are in a controlled (fixed or varying) stochiometric ratio and are respectively introduced in the form of a first reaction gas and a second reaction gas into the reactor, where the reaction gases are chemically decomposed as a result of a supply of energy, and some of...

AI Technical Summary

Benefits of technology

The invention aims to improve the cost-effectiveness of light-emitting diodes (LEDs) by enhancing the lumen / cost ratio. This is achieved by preconditioning the second process gas before it enters the process chamber, which leads to a higher concentration of radicals in the gas inlet member. The preconditioned gas is then injected into the process chamber in the form of a flat layer, reducing the amount of material needed. The concentration of the second process gas is higher than that of the first process gas, resulting in a lower defect concentration. The invention also allows for a greater mass flow of a carrier gas, which further improves the cost-effectiveness of LEDs.

Problems solved by technology

The processes used hitherto are expensive, since the outlay on materials, in particular with regard to the nitrogen hydride, is considerably higher than the outlay on materials for the metal alkyl, for example TMG.

Although the hydrides are relatively inexpensive compared to the alkyls, the consumption costs are approximately the same, on account of the high consumption.

The high consumption is a result of the high thermal activation energy of the hydrides compared to the activation energies of the metal alkyls.

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