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Transistor device

a transistor and transistor technology, applied in the direction of transistors, semiconductor devices, electrical devices, etc., can solve the problems of phosphorus epitaxial growth with high steam pressure, easy deterioration of characteristic of bihemt devices, and cost demeri

Inactive Publication Date: 2013-01-10
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is a transistor device that can be used instead of a more expensive and reliable HBT device. The transistor device has a similar reliability to the HBT device, which has a single body structure. This means that the transistor device can be used to achieve the same level of reliability as the HBT device.

Problems solved by technology

However, in this case, the high resistance buffer layer required for HEMT structure, needs to be grown considerably thick, thus posing a demerit in terms of a cost.
However, a high vacuum state is required for the MBE method, and therefore a weak point of the MBE method is that phosphorus epitaxial growth with high steam pressure is difficult.
However, as a result of a reliability test, it is found that there is a problem that the characteristic of the BiHEMT device is easily deteriorated, because the characteristic requested for a communication of the next generation (LTE, A-LTE) is extremely strict.

Method used

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Experimental program
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Effect test

first embodiment

[0052]In the epitaxial wafer for a transistor device according to a first embodiment shown in FIG. 1, the InGaP layer included in the epitaxial layer is the separation layer.

[0053]As shown in FIG. 1, the epitaxial wafer 50 for a transistor device has a BiHEMT structure in which the HEMT structure 51 is formed on the semi-insulating substrate 31 composed of GaAs, and the HBT structure 52 is formed on the HEMT structure 51 through the separation layer 40 composed of In(1-y)GayP layer (0<y<1).

[0054]The HEMT structure 51 is formed by sequentially stacking:

[0055]GaAs layer 32a and AlGaAs layer 32b being a buffer layer of two layers;

[0056]n-type AlxGa(1-x)As layer (033;

[0057]AlxGa(1-x)As layer (034;

[0058]InxGa(1-x)As layer (035;

[0059]AlxGa(1-x)As layer (036;

[0060]n-type AlxGa(1-x)As layer (037;

[0061]AlxGa(1-x)As layer (038; and

[0062]n-type GaAs layer being a contact layer 39.

[0063]The HBT structure 52 is formed by sequentially stacking:

[0064]n-type GaAs layer being a sub-collector layer 4...

second embodiment

[0092]In the epitaxial wafer for a transistor device according to a second embodiment shown in FIG. 2, the InGaP layer included in the epitaxial layer, is an emitter layer. An emitter layer 48 is formed of In(1-y)GayP layer (047 is formed of the InGaP layer with the band gap energy of less than 1.91 eV similarly to the conventional example. Thus, even if the InGaP layer with the band gap energy of 1.91 eV or more is used for the emitter layer 48 of HBT in BiHEMT, the high effect can be obtained similarly to the first embodiment, owing to the above-described effect of c).

third embodiment

[0093]In the epitaxial wafer for a transistor device according to a third embodiment shown in FIG. 3, the InGaP layer included in the epitaxial layer is the separation layer and the emitter layer. Not only the separation layer 40 but also the emitter layer 48 is formed of the In(1-y)GayP layer (040 of HEMT and HBT in BiHEMT and the emitter layer 48 of HBT, further greater effect than the effect of the first embodiment can be obtained from the above-described reasons (a) to (c).

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Abstract

To provide a transistor device, which is composed of a compound semiconductor, having a multilayer structure in which a high electron mobility transistor (HEMT) and a heterojunction bipolar transistor (HBT) are overlapped on the same substrate and epitaxial-grown thereon, wherein a band gap energy of an indium gallium phosphide layer (InGaP) included in an epitaxial layer, is set to 1.91 eV or more.

Description

[0001]The present application is based on Japanese Patent Application No. 2011-151108, filed on Jul. 7, 2011, the entire contents of which are hereby incorporated by reference.TECHNICAL FIELD[0002]The present invention relates to a transistor device, and more particularly to the transistor device suitable for a power amplifier for a high frequency device composed of a compound semiconductor.DESCRIPTION OF RELATED ART[0003]A heterojunction bipolar transistor (HBT) applied to a power amplifier (PA) for high frequency device achieves an ultra-fast operation with low distortion, and is used for a transmission part mainly such as a portable telephone terminal and wireless LAN. A structure in which a high electron mobility transistor (HEMT) is added to HBT, is called BiHEMT. Owing to the BiHEMT, a part of a peripheral circuit of HBT can be integrated to be 1 chip. The BiHEMT has an advantage that miniaturization of a module and shortening of a transmission path can be realized, thereby im...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/778
CPCH01L29/7371H01L29/7785H01L27/0623H01L21/8252H01L27/0605H01L29/201
Inventor MEGURO, TAKESHIWADA, JIROMORIYA, YOSHIHIKO
Owner SUMITOMO CHEM CO LTD
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