Graphene transparent electrode and method for manufacturing the same

Abstract

Disclosed herein are a method for manufacturing a graphene transparent electrode and a graphene transparent electrode manufactured by the method. The method includes: providing a graphene oxide solution: forming a metal thin film on a glass substrate; coating the graphene oxide solution on the metal thin film, followed by drying; primarily reducing the thus obtained graphene oxide by using a reducing agent, to obtain reduced graphene oxide; secondarily reducing the reduced graphene oxide by heat treatment under the inert atmosphere, to form a reduced layer; compressing a transparent film on the reduced layer; and etching the metal film by an etching solution. The method enables a graphene transparent electrode having economical feasibility and excellent electric conductivity to be manufactured.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Korean Patent Application No. 10-2011-0108865, filed on Oct. 24, 2011, entitled “Graphene Transparent Electrode and Method for Manufacturing the Same”, which is hereby incorporated by reference in its entirety into this application.BACKGROUND OF THE INVENTION[0002]1. Technical Field[0003]The present invention relates to a graphene transparent electrode and a method for manufacturing the same.[0004]2. Description of the Related Art[0005]In general, graphite has a structure in which flat second dimensional graphene sheets each composed of carbon atoms linked in hexagonal shapes are stacked. Recently, it was found that one or several layers of graphene sheets peeled off from the graphite have very useful properties different from those of the existing materials, as the result of researching characteristics of the sheets.[0006]The most notable property is that electrons flow in the graphene sheet as if th...

AI Technical Summary

Benefits of technology

The patent is about a method for making a transparent electrode made of graphene. By coating a solution of graphene oxide onto a metal film on a glass substrate, and then reducing it with a reducing agent and heat treatment, researchers have created a conductive material with exceptional electrical properties. The resulting graphene is then compressed onto a transparent film before being removed and used as a transparent electrode. This technique allows for the creation of a strong, flexible, and highly conductive electrode that can be used in various applications such as electronics and sensors.

Problems solved by technology

In addition, the graphene sheet exhibits an abnormal half-integer quantum hall effect with respect to electrons and holes.

Meanwhile, the existing silicon based semiconductor process techniques make it impossible to manufacture semiconductor devices having high integration density of 30 nm or less.

The reason is that, in a case where a metal atom layer of gold or aluminum deposited on a substrate has a thickness of 30 nm or less, metal atoms are not thermodynamically stable, so that they adhere and stick together, thereby failing to obtain a uniform thin film, and the concentration of impurities doped in silicon is not uniform in the nano-sized thin film.

Therefore, in the graphene, a charge density is changed depending on gate voltage, resulting in changing electric resistance.

However, the graphene thin films disclosed in the patents are formed by complicated processes, and they are economically disadvantageous and exhibit low electric conductivity.

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