Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
Inactive Publication Date: 2014-06-12
SAMSUNG ELECTRONICS CO LTD
7 Cites 47 Cited by
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The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.
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Spin filteringCritical current +11
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