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Method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns

a nanowire pattern and single crystalline technology, applied in the direction of nanoinformatics, crystal growth process, polycrystalline material growth, etc., can solve the problems of irregular twisted nanowires, inability to manufacture highly integrated nanowire device arrays, and increase the manufacturing cost of devices, etc., to achieve rapid and simple manufacturing, high performance, and large area

Inactive Publication Date: 2015-08-06
POSTECH ACAD IND FOUND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is a manufacturing method that can produce inorganic nanowires with precise position and direction control, and in a single crystal form. This allows for the rapid and simple manufacture of high-performance nanowire transistors with large areas. Additionally, the use of single crystalline metal nanowires aligned by a metal precursor can be used as electrodes for transparent displays or solar batteries.

Problems solved by technology

In this process, since the nanowires irregularly spread, it is not possible to manufacture a highly integrated nanowire device array.
In addition, in order to deposit an electrode on one nanowire, since an expensive equipment such as an E-beam evaporation must be used, manufacturing cost of a device is increased.
However, through the electrospinning, very irregularly twisted nanowires are manufactured.
In order to manufacture an electronic device using nanowires, since the nanowires must be aligned to some degree, it is very difficult to apply the nanowires manufactured by the electrospinning to manufacturing of the electronic device.
In order to use the nanowires for the electronic device, since the nanowires must be single crystalline nanowires, it is difficult to apply the manufactured nanowires to manufacturing of a high performance electronic device.

Method used

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  • Method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns
  • Method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns
  • Method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns

Examples

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example 1

[0069]Dihydrogen hexachloroplatinate (IV) hexahydrate and poly(vinylpyrrolidone) were mixed at a weight ratio of 80:20 in a dimethylformaldehyde solvent to prepare an inorganic-polymer liquid. At this time, a concentration of the inorganic-polymer liquid was 15 wt %.

[0070]The prepared inorganic-polymer liquid was positioned in the syringe 10 (storage capacity: 1 ml) of the electric field aided robotic nozzle printer illustrated in FIG. 2a. Then, after positioning a silicon substrate on a collector formed of aluminum and having flatness of ±10 μm, while applying a voltage of about 1.5 kV to a nozzle, the inorganic-polymer liquid was discharged from the nozzle by a discharge controller using a nozzle syringe pump. At this time, a discharge speed was 200 nl / min. A liquid drop was generated at the end of the nozzle by the discharge process. Due to electrostatic power between charge formed by the voltage applied to the liquid drop generated by the process and the collector, horizontally ...

example 2

[0076]Zinc acetate hydrate and polyvinylpyrrolidone were mixed in a weight ratio of 75:25 in a distilled water to prepare an inorganic-polymer liquid. At this time, a concentration of the inorganic-polymer liquid was 12 wt %.

[0077]The prepared inorganic-polymer liquid was positioned in the syringe (storage capacity: 1 ml) of the electric field aided robotic nozzle printer illustrated in FIG. 2. Then, after positioning a silicon substrate coated with silicon dioxide (SiO2) to a thickness of 100nm on a collector, while applying a voltage of about 2.0 kV to a nozzle, the inorganic-polymer liquid was discharged from the nozzle using the syringe pump. At this time, a discharge speed was 200 nl / min. A liquid drop was generated at an end of the nozzle by the discharge process. Due to electrostatic power between charge formed by the voltage applied to the liquid drop generated by the process and the collector, horizontally aligned inorganic precursor / organic polymer composition nanowire pat...

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Abstract

Disclosed is that a method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns, including mixing an inorganic precursor and an organic polymer in water or an organic solvent to prepare an inorganic-polymer liquid, forming inorganic precursor / organic polymer composite nanowire patterns aligned on a substrate using the inorganic-polymer liquid, and irradiating eximer laser along the aligned inorganic precursor / organic polymer composite nanowire patterns.

Description

TECHNICAL FIELD[0001]The present invention relates to a method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns.BACKGROUND ART[0002]In a future information-oriented society where information may be obtained anytime and anywhere (ubiquitous), amounts of information that may be obtained or processed by people through “wearing computers” and “flexible displays”will remarkably increase. In addition, as communication channels among people become more various, it is expected to be more global. Therefore, requirements for smaller electronic devices with high performance are increasing and interests in nano-sized electronic devices are increasing.[0003]Since inorganic nanowires that are one-dimensional inorganic nanostructures have a higher electric characteristic than that of a bulk inorganic material, researches on using inorganic semiconductor nanowires as an active layer are actively performed in a semi-conductor device field.[0004]The most representa...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/02H01L29/06C30B29/12C30B29/54C30B7/14C30B29/60
CPCH01L21/02603C30B7/14C30B29/60C30B29/12C30B29/54H01L21/02628H01L21/02664H01L21/02422H01L21/0242H01L29/0676H01L21/268H01L21/02381H01L21/02554B82Y10/00B82Y40/00H01L29/66439H01L29/66469H01L29/0673C30B7/02C30B29/605H01L21/02488H01L29/20H01L21/02639H01L21/0273
Inventor LEE, TAE-WOOMIN, SUNG-YONG
Owner POSTECH ACAD IND FOUND