Cleaning composition for semiconductor substrate and cleaning method

a technology for cleaning compositions and semiconductor substrates, applied in detergent compositions, detergent mixture preparations, detergent compounding agents, etc., can solve the problems of difficult removal of fine particles and/or attached particles between the pattern walls
US20160032227A1Inactive Publication Date: 2016-02-04JSR CORPORATIOON
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
JSR CORPORATIOON
Publication Date
2016-02-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] The present application claims priority to Japanese Patent Application No. 2014-157071, filed Jul. 31, 2014. The contents of this application are incorporated herein by reference in their entirety.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a cleaning composition for a semiconductor substrate and a cleaning method.

[0004] 2. Discussion of the Background

[0005] In production processes of semiconductor substrates, cleaning is conducted in order to remove contaminants such as particles attached onto the surface of the substrates having a pattern formed thereon. In recent years, miniaturization of the formed pattern, and an increase of the aspect ratio have advanced. In cleaning through using a liquid and / or gas, it is difficult to achieve the flow of the liquid and / or gas between the pattern walls in the vicinity of a substrate surface, thereby making removal of fine particles and / or the attac...

Claims

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