Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

System for treatment of deposition reactor

a technology for deposition reactors and reactors, applied in chemical vapor deposition coatings, coatings, electric discharge tubes, etc., can solve the problems and achieve the effect of increasing the throughput of substrate reactors and reducing the cost of operating the reactors

Inactive Publication Date: 2016-12-29
ASM IP HLDG BV
View PDF7 Cites 337 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method and system for reducing the formation of residue and mitigating defects in a deposition reactor. This is achieved by using a gas-phase reactant to remove unwanted residue and transform residue resulting from the use of precursors used in the deposition of doped metal films. By doing so, fewer particles are formed within the reactor and defects are reduced in the deposited films. This method also increases substrate throughput and decreases the cost of operating the reactor. The treatment reactant may include compounds such as hydrogen, ammonia, silanes, or halosilanes, which are exposed to remote or direct thermal or plasma activation to form activated species.

Problems solved by technology

In addition, substrate throughput of the reactor is increased and the cost of operating the reactor is decreased.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System for treatment of deposition reactor
  • System for treatment of deposition reactor
  • System for treatment of deposition reactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021]The description of exemplary embodiments of methods and systems provided below is merely exemplary and is intended for purposes of illustration only; the following description is not intended to limit the scope of the disclosure or the claims. Moreover, recitation of multiple embodiments having stated features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the stated features.

[0022]The method and system described herein can be used to mitigate formation of remove, and / or transform residue in a reactor used to deposit doped metal films (e.g., films including carbon, boron, silicon, and / or nitrogen) that otherwise buildups and / or generates particles during a deposition process. Use of the methods and systems described herein results in a reduction of particle formation from residue and therefore results in higher throughput and in a lower cost of operation of deposition reactors, compared to re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
decomposition temperatureaaaaaaaaaa
temperaturesaaaaaaaaaa
of timeaaaaaaaaaa
Login to View More

Abstract

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This Application is a Continuation-in-Part of U.S. patent application Ser. No. 14 / 987,420, entitled “METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR,” filed Jan. 4, 2016; the '420 Application is a Divisional Application of U.S. patent application Ser. No. 14 / 166,462, entitled “METHOD FOR TREATMENT OF DEPOSITION REACTOR,” filed Jan. 28, 2014, now U.S. Pat. No. 9,228,259; the '462 Application claims the benefit of U.S. Provisional Application No. 61 / 759,990, entitled “METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR,” filed Feb. 1, 2013. The disclosures of the foregoing are hereby incorporated by reference herein.FIELD OF INVENTION[0002]The disclosure generally relates to methods and systems for treating deposition reactors. More particularly, exemplary embodiments of the present disclosure relate to methods and systems for mitigating or removing buildup in gas-phase deposition reactors.BACKGROUND OF THE DISCLOSURE[0003]Doped met...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/44
CPCC23C16/4405C23C16/4404C23C16/32H01L21/32051H01L21/28556H01L21/76843H01J37/32495
Inventor HAUKKA, SUVISHERO, ERIC JAMESALOKOZAI, FREDLI, DONGWINKLER, JERELD LEECHEN, XICHONG
Owner ASM IP HLDG BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com