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Electroplated copper

a technology of electroplated copper and copper plate, which is applied in the direction of basic electric elements, semiconductor devices, etc., can solve the problems of copper becoming brittle, unsuitable approach, and unable to solve cracking issues, etc., and achieves improved tensile strength, good elongation, and low thermal stress.

Inactive Publication Date: 2019-05-09
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a copper metal that has improved strength and elongation compared to conventional copper metals. This copper metal can resist cracking when exposed to high temperatures and can be used in electronic devices where the copper is deposited on a surface of a substrate at a faster rate than within its aperture. The invention also allows for smooth and uniform copper deposits on both the substrate surface and within its aperture. The copper metal is highly suitable for fine line redistribution layer technology used in advanced packaging. The electroplating compositions of the invention can be used to electroplate this copper metal onto metal seed layers adjacent to or joined to dielectric or semiconductor materials.

Problems solved by technology

The pathway to resolve the cracking issue is still controversial.
However, as feature sizes of electronic components on PCBs decrease and the components become more integrated to microsized and even to nanosized dimensions, such as is currently taking place in advanced packaging applications, this approach may not be suitable.
A disadvantage of copper with high tensile strength is that such copper can become brittle.
Although nanotwinned copper may be suitable to address the problem of cracking of copper in RDLs, nanotwinned copper has been found to be unsuitable in many applications for plating vias, such as in advanced packaging applications where 3D stacking is needed to increase circuit densities.
In many such applications via fill has not been found to be acceptable and the surface of the copper deposits have been found to be unacceptably rough and nonuniform.

Method used

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Examples

Experimental program
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Effect test

example 1

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[0057]Glycerol diglycidyl ether (60 mmols) and 1H-imidazole (100 mmols) were added at room temperature to a round-bottom reaction flask set in a heating bath. Then 40 mL of DI water were added to the flask. The temperature of the heating bath was set to 98° C. The reaction mixture was heated for 5 hours and left stirring at room temperature for another 8 hours. The reaction product (reaction product 1) was used without purification. The molar ratio of the moieties from the 1H-imidazole to the molar ratio of the ether moieties was 100:63.

example 2

Leveler

[0058]Glycerol diglycidyl ether (30 mmols) and an imidazole compound mixture (30 mmols) of 1H-imidazole (25% by mole)+4-phenylimidazole (75% by mole) were added at room temperature to a round-bottom reaction flask set in a heating bath. Then 40 mL of DI water were added to the flask. The temperature of the heating bath was set to 98° C. The reaction mixture was heated for 5 hours and left stirring at room temperature for another 8 hours. The reaction product (reaction product 2) was used without purification. The molar ratio of the moieties from the imidazole mixture to the molar ratio of the ether moieties was 1:1.

example 3

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[0059]2-(2-aminoethyl)pyridine (100 mmols) was added at room temperature to a round-bottom reaction flask set in a heating bath. Then 40 mL of DI water were added to the flask. The temperature of the heating bath was heated to a jacket temperature set at 90° C. Once the bath reached an internal temperature of 76-78° C., glycerol diglycidyl ether (100 mmols) was slowly fed into the round-bottom reaction flask to moderate any exotherm. The reaction mixture was heated with the jacket temperature set at 90° C. for 4 hours with stirring. The reaction mixture was then cooled down to 50-55° C. and a sulfuric acid solution was added to dilute the mixture to 40 wt %. The final reaction product (reaction product 3) was cooled to 25° C. then gravity drained. Reaction product 3 was used without purification. The molar ratio of the moieties from the imidazole mixture to the molar ratio of the ether moieties was 1:1.

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Abstract

An electroplated copper metal having certain grain misorientations between adjacent grains at a <111> crystal plane direction provides for improved properties of the copper. A method of electroplating the copper metal on substrates, including dielectric substrates, is also disclosed.

Description

Field OF THE INVENTION[0001]The present invention is directed to electroplated copper and methods of electroplating the copper where copper metal has high tensile strength. More specifically, the present invention is directed to electroplated copper and methods of electroplating the copper where copper metal has high tensile strength and has a certain percentage of specific angle misorientations between adjacent grains of the copper metal with respect to a crystal plane direction of <111> to provide the high tensile strength copper metal in addition to other improved material properties.BACKGROUND OF THE INVENTION[0002]In the drive toward future applications in the electronics industry, such as artificial intelligence and autonomous vehicles, advanced semiconductor packaging products and processes that enable high density circuits, reduced form factor (size, configuration or physical arrangement of a device) and increased functionality in electronic devices are highly desired....

Claims

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Application Information

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IPC IPC(8): C25D3/38C25D5/50C25D7/12
CPCC25D3/38C25D5/50C25D7/123C22F1/08
Inventor KAO, YU HUA
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC