Positive photoresist composition and method of forming patterned polyimide layer

Inactive Publication Date: 2020-03-19
ECHEM SOLUTIONS
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Benefits of technology

[0006]In view of the above, an objective in one embodiment is to provide an improved positive photoresist composition, which can greatly improve the chemical resistance of the photoresist layer to the

Problems solved by technology

However, most of the current positive photoresist films on the market have poor chemical resistance to the polyimide stripper, so that t

Method used

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  • Positive photoresist composition and method of forming patterned polyimide layer

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Embodiment Construction

[0034]Hereinafter, several embodiments are described to illustrate the implementation of the present invention; one skilled in the art can easily realize the advantages and effects of the present invention from the following specifications. Various modifications and variations could be made in order to practice or apply the present invention without departing from the spirit and scope of the invention.

[0035]Preparing a Positive Photoresist Composition

[0036]Various cresol-type novolac resins, diazonaphthoquinone-based sensitizers (1-phenol-4-(1-(4-(2-(4-(phenol)methyl)phenyl)propyl-2)phenyl)-1-(4-phenolyl phenyl)ethyl)phenyl diazonaphthoquinone derivative), fluorine surfactant (MEGAFAC F-477, purchased from the DIC Corporation) and the organic solvent (2-heptanone) were mixed in the amounts as shown in Table 1 below to prepare the positive photoresist compositions of Examples 1 to 3 and Comparative Examples 1 to 4, respectively. The characteristics of the cresol-type novolac resin us...

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Abstract

The present invention provides a positive photoresist composition comprising a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]Pursuant to 35 U.S.C. § 119(a), this application claims the benefit of the priority to Taiwan Patent Application No. 107132323, filed Sep. 13, 2018. The content of the prior application is incorporated herein by its entirety.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The present invention relates to a photoresist composition and a method of patterning thereof, and more particularly to a positive photoresist composition and a method of forming a patterned polyimide layer.2. Description of the Prior Arts[0003]In a redistribution layer (RDL) process in the semiconductor industry, the input and output (I / O) pads of the original design can be changed by way of coating a polyimide film on a silicon wafer through wafer-level metal wiring process and bumping process, allowing the IC to be applied to various component modules.[0004]In the semiconductor manufacturing process, the patterned polyimide film is currently realized by dry e...

Claims

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Application Information

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IPC IPC(8): G03F7/039G03F7/004
CPCG03F7/0045G03F7/039G03F7/20G03F7/38G03F7/422G03F7/0048G03F7/322G03F7/168G03F7/162G03F7/0236G03F7/40G03F7/425
Inventor CHANG, TING-WEICHUNG, MING-CHE
Owner ECHEM SOLUTIONS
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