Positive photoresist composition and method of forming patterned polyimide layer

Abstract

The present invention provides a positive photoresist composition comprising a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å / s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]Pursuant to 35 U.S.C. § 119(a), this application claims the benefit of the priority to Taiwan Patent Application No. 107132323, filed Sep. 13, 2018. The content of the prior application is incorporated herein by its entirety.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The present invention relates to a photoresist composition and a method of patterning thereof, and more particularly to a positive photoresist composition and a method of forming a patterned polyimide layer.2. Description of the Prior Arts[0003]In a redistribution layer (RDL) process in the semiconductor industry, the input and output (I / O) pads of the original design can be changed by way of coating a polyimide film on a silicon wafer through wafer-level metal wiring process and bumping process, allowing the IC to be applied to various component modules.[0004]In the semiconductor manufacturing process, the patterned polyimide film is currently realized by dry e...

AI Technical Summary

Benefits of technology

The patent text describes a positive photoresist composition that can improve the chemical resistance of a photoresist layer to a polyimide stripper for better protection of a low-dielectric polyimide layer. The composition also allows for easy removal of the photoresist layer by a photoresist remover to avoid undesired residue after wet etching. The technical effects of this composition include improved patterning accuracy and quality in the patterned polyimide layer, as well as optimized manufacturing process. Additionally, the patent describes a method using the positive photoresist composition, which can also mitigate or prevent precipitation of the sensitizer and ensure applicability of the composition.

Problems solved by technology

However, most of the current positive photoresist films on the market have poor chemical resistance to the polyimide stripper, so that the positive photoresist film cannot protect the polyimide film as expected, and even affects the quality of the patterned polyimide film.

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