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Heat treatment apparatus that performs defect repair annealing

a technology of defect repair and heat treatment apparatus, applied in the direction of electric heating, electric discharge heating, electric apparatus, etc., can solve the problems of severe heat efficiency, marked deformation of energy efficiency necessary to heating, and deformation of heat efficiency, etc., to suppress radiation loss, reduce heat capacity, and uniform heating

Active Publication Date: 2016-02-23
HITACHI HIGH-TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a heat treatment apparatus that can anneal SiC at high temperature while keeping its heat capacity low and achieving uniform heating. This is achieved through the use of glow discharge, and the inclusion of reflection mirrors helps to suppress radiation loss and allows for high-temperature heat treatment.

Problems solved by technology

When the resistive heating furnace described in Japanese Patent Application Laid-Open Publication No. 2009-32774 is used to perform heating at 1800° C. or more, problems described below become severe.
A first problem lies in heat efficiency.
Therefore, if a region to be heated is wide, energy efficiency necessary to heating markedly degrades.
For similar reasons, the heat capacity of the region to be heated gets very large, and it takes much time to raise or lower the temperature.
A second problem is concerned with wastage of a furnace material.
These materials are usually expensive.
If a furnace body is large, a considerable cost is necessary to replacement.
The cost of replacement gets higher than that in the normal Si process.
However, in the case of induction heating, if the electric resistivity of the object of heating is low, a large induction current is necessary to heating.
The induction heating method is therefore confronted with a problem on heat efficiency.

Method used

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  • Heat treatment apparatus that performs defect repair annealing
  • Heat treatment apparatus that performs defect repair annealing
  • Heat treatment apparatus that performs defect repair annealing

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first embodiment

[0028]FIG. 1A shows a basic construction of a heat treatment apparatus in accordance with the present embodiment employing plasma. To begin with, the construction of the heat treatment apparatus will be described below. A sample to be heated 1 is placed in a pair of parallel plate electrodes including an upper electrode 2 and a lower electrode 3. In the present embodiment, single-crystal silicon carbide (SiC) of 4 inch (Ø 100 mm)[0029]in diameter was adopted as the sample to be heated 1. The diameter of the upper electrode 2 and lower electrode 3 was 120 mm, and the thickness thereof was 5 mm. As each of the upper electrode 2 and lower electrode 3, a graphite substrate having silicon carbide accumulated on the surface thereof according to a chemical vapor phase deposition method was adopted.

[0030]The sample to be heated 1 was placed on the lower electrode 3, and the gap 4 between the upper electrode 2 and lower electrode 3 was 0.8 mm. The sample to be heated 1 has a thickness rangin...

second embodiment

[0062]A second embodiment will be described in conjunction with FIG. 2A and FIG. 2B. Items that have been described in relation to the first embodiment but will not be described in relation to the present embodiment will apply to the present embodiment unless the circumstances are exceptional.

[0063]FIG. 2A is a sectional view of an electrical discharge formation unit included in a heat treatment apparatus in accordance with the present embodiment employing plasma. In relation to the second embodiment, only a difference from the first embodiment will be described below. FIG. 2A and FIG. 2B are enlarged view of a portion equivalent to the upper electrode 2 and lower electrode 3 included in the first embodiment. In the second embodiment shown in FIG. 2A and FIG. 2B, unlike the embodiment shown in FIG. 1A to FIG. 1C, the upper electrode 2 is provided with a second gas introduction unit 22, a gas diffuse layer 23, and gas jet holes 24. The other components are identical to those of the f...

third embodiment

[0065]A third embodiment will be described in conjunction with FIG. 3 and FIG. 4. Items that have been described in relation to the first or second embodiment but will not be described in relation to the present embodiment can apply to the present invention unless the circumstances are exceptional.

[0066]FIG. 3 and FIG. 4 are diagrams showing a basic construction of a heat treatment apparatus in accordance with the third embodiment of the present invention employing plasma. FIG. 3 shows a state in which heating treatment is under way, and FIG. 4 shows a state in which the treatment is completed. In relation to the third embodiment, only a difference from the first embodiment will be described below. In FIG. 3 and FIG. 4, an up-and-down driving mechanism 25 for the reflection mirrors 13 is added to the construction of the first embodiment shown in FIG. 1A to FIG. 1C. As shown in FIG. 3, during heating treatment, the upper electrode 2 and lower electrode 3 are located as close to the r...

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Abstract

Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.

Description

CLAIM OF PRIORITY[0001]The present application claims priority from Japanese Patent Application JP 2010-200845 filed on Sep. 8, 2010, the content of which is hereby incorporated by reference into this application.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a semiconductor fabrication apparatus that fabricates semiconductor devices. More particularly, the present invention is concerned with a heat treatment apparatus that performs activation annealing or defect repair annealing, which is preceded by doping of an impurity and intended to control the conductivity of a semiconductor substrate, and oxidation or the like of the surface of the semiconductor substrate.[0004]2. Description of the Related Art[0005]In recent years, an expectation has been put on introduction of a novel material having a wide bandgap, such as, silicon carbide (SiC) (or gallium nitride (GaN)) as a substrate material of a power semiconductor device. Since SiC h...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H05B7/18H05B1/02
CPCH05B7/18H01L21/324
Inventor YOKOGAWA, KEN'ETSUMIYAKE, MASATOSHI
Owner HITACHI HIGH-TECH CORP