Semiconductor element with tungsten oxide layer and method for its production
A technology for semiconductors and components, applied in the field of semiconductor components and their manufacturing, can solve problems such as inability to use capacitors, lack of thermal stability, etc., and achieve a highly selective effect
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[0036] FIG. 1 shows a cross-sectional view of a silicon wafer with a silicon substrate 1 . The state of the silicon wafer shown in FIG. 1 corresponds, for example, to the state it would have in a standard CMOS process after the wells of the CMOS transistors and the (not shown) insulation of the individual transistors have been produced.
[0037]A silicon dioxide layer 2 approximately 1 to 5 nm thick is now deposited on the surface of the silicon substrate 1 as a barrier layer. This oxide layer 2 can be produced, for example, by thermal oxidation. If additionally containing NO molecules or N 2 The nitrided silicon dioxide layer 2 can be prepared by performing thermal oxidation in an atmosphere of O molecules. The silicon dioxide layer has an extremely low trap density, which has a positive effect on the function of the transistors to be produced.
[0038] As already mentioned in the introduction, accurate detection of the thickness of such a thin oxide layer is difficult. H...
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