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Barrier height reinforced ultraviolet detector with gallium nitride schottky and production thereof

An ultraviolet detector and Schottky potential technology, applied in photometry, instruments, measuring devices, etc., can solve the problems of low device efficiency, hindering the practical application and further development of Schottky structure detectors, and low height.

Inactive Publication Date: 2008-02-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the pin structure, the barrier height of the Schottky structure is relatively low, resulting in a large dark current of the Schottky structure detector and low device efficiency.
Practical application and further development of Schottky structure detectors are hindered

Method used

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  • Barrier height reinforced ultraviolet detector with gallium nitride schottky and production thereof

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Embodiment Construction

[0032] Please refer to Fig. 1, a gallium nitride-based Schottky barrier highly enhanced ultraviolet detector of the present invention is characterized in that it includes:

[0033] A substrate 10, the substrate 10 is sapphire, silicon, gallium nitride, gallium arsenide or silicon carbide;

[0034] A high N-type doping concentration layer 11, the ohmic contact layer 11 is fabricated on the substrate 10, the high N-type doping concentration layer 11 is an N-type gallium nitride material with high electron concentration, and its electron concentration is greater than 1×10 18 cm -3 ;

[0035] An active layer 12, the active layer 12 is made on the high N-type doping concentration layer 11, the area of ​​the active layer 12 is smaller than the ohmic contact layer 11, and the source layer 12 is intrinsic nitride with low electron concentration Gallium materials, the electron concentration of which is less than 1 × 10 17 cm -3 ;

[0036] A Schottky barrier height enhancement laye...

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Abstract

The invention consists of a substrate, a high N type doping layer, an active layer, a Schottky barrier height enhancement layer, a N type Schottky contact electrode and a N type ohmic contact electrode. The ohmic contact layer is made on the substrate. The active layer is made on high N type doping layer, and has a less area than ohmic contact layer. The Schottky barrier height enhancement layer is made on active layer. The N type Schottky contact electrode is made on Schottky barrier height enhancement layer. The ohmic contact electrode is made on high N type doping layer.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a novel gallium nitride (GaN)-based Schottky barrier highly enhanced ultraviolet detector and a manufacturing method. Background technique [0002] As a third-generation semiconductor, gallium nitride (GaN) and its series of materials (including aluminum nitride, aluminum gallium nitride, indium gallium nitride, and indium nitride) are characterized by their large band gap and wide spectral range (covering from ultraviolet to to the infrared full band), high temperature resistance and corrosion resistance, and has great application value in the field of optoelectronics and microelectronics. GaN ultraviolet detector is a very important GaN-based optoelectronic device, which has important application value in civil and military fields such as missile warning, rocket plume detection, ultraviolet communication, biochemical weapon detection, aircraft guidance, spacecraft, and fire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/108H01L31/18G01J1/02
CPCY02P70/50
Inventor 赵德刚杨辉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI