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Detergent for removing resist and method for making semiconductor

A manufacturing method and resist technology, applied in the field of cleaning solution, can solve the problems of unsatisfactory removal of resist residues, decrease in driving speed of semiconductor elements, increase in capacitance between wirings, etc., and achieve elimination of characteristic deterioration, Eliminates drive speed drops and prevents narrow gaps

Inactive Publication Date: 2008-02-20
RENESAS ELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, due to the increase in the capacitance between the wirings, the so-called deterioration of the characteristics of the driving speed of the semiconductor element or the short circuit between the wirings occurs.
In addition, conventional cleaning solutions cannot achieve satisfactory effects in terms of removal of resist residues, prevention of copper corrosion, and prevention of Low-k film corrosion.

Method used

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  • Detergent for removing resist and method for making semiconductor
  • Detergent for removing resist and method for making semiconductor
  • Detergent for removing resist and method for making semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0056] One of the cleaning solutions for removing the resist of this application contains a salt of hydrofluoric acid and a metal-free alkali (component A), a water-soluble organic solvent (component B1), and is composed of organic acids and inorganic acids The selected one or more acids (component C) and water (component D), and the hydrogen ion concentration pH is 4-8.

[0057] The A component of the present invention is a salt containing hydrofluoric acid and a metal-free base. As the metal-free base, organic amine compounds such as hydroxylamines, primary, secondary or quaternary aliphatic amines, alicyclic amines, heterocyclic amines, aromatic amines, ammonia, lower quaternary ammonium bases, etc. are preferably used .

[0058] Examples of hydroxylamines include hydroxylamine, N-methylhydroxylamine, N,N-dimethylhydroxylamine, N,N-diethylhydroxylamine, and the like.

[0059] Examples of primary aliphatic amines include methylamine, ethylamine, propylamine, butylamine, monoetha...

Embodiment approach 2

[0073]Another cleaning solution for removing the resist of the present invention is a salt containing hydrofluoric acid and a metal-free base (component A), a water-soluble organic solvent (component B1), and is composed of organic and inorganic acids One or more acids (component C), water (component D), and ammonium salt (component E1) selected from the group, and the hydrogen ion concentration pH is 4-8. That is, in this embodiment, in addition to the A component, the B1 component, the C component, and the D component of the cleaning solution for removing the resist of the first embodiment described above, the E1 component is added to adjust the pH to 4-8.

[0074] Here, the ammonium salt (E1 component) has an effect of suppressing corrosion on the insulating film, and its content is preferably 0.01% by mass to 5% by mass, and more preferably 0.05% by mass to 3% by mass. When less than 0.01% by mass, for TEOS, SiN, SiON, SiO 2 Corrosion of the insulating film is intense, and whe...

Embodiment approach 3

[0077] Another cleaning solution for removing the resist of the present invention is a salt containing hydrofluoric acid and a metal-free base (component A), a water-soluble organic solvent (component B2), phosphonic acid (component C1), Water (component D) and metal-free alkali (component E), and the hydrogen ion concentration pH is 2-8. The addition of phosphonic acid (component C1) and a metal-free alkali (component E) improves the corrosion resistance of the copper-based metal film. Therefore, a cleaning solution for removing resist with a wide pH range can be used.

[0078] The A component of the present invention is a salt of hydrofluoric acid and a metal-free base, and the details are as described in the first embodiment.

[0079] The B2 component of the present invention is a water-soluble organic solvent. There are no particular restrictions as long as it is a water-soluble organic solvent, but it is preferable to use amides, pyrrolidones, alkylureas, sulfoxides, sulfones...

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Abstract

The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one acid selected from a group consisting of organic acid and inorganic acid (C component), water (D component), and optionally an ammonium salt (E1 component), and its hydrogen ion concentration (pH) is 4-8. Thus, in the manufacturing process of a semiconductor device such as a copper interconnecting process, removing efficiency of resist residue and other etching residue after etching or ashing improves, and corrosion resistance of copper and insulating film also improves.

Description

Technical field [0001] The present invention relates to dry etching in the process of forming metal wiring with copper as the main component on a semiconductor substrate, stripping and removing the remaining resist film, resist residue, and residues reacting with other etching gases (corrosion Residue) cleaning solution for removing resist, and manufacturing method of semiconductor device using the cleaning solution. Background technique [0002] The manufacturing process of highly integrated semiconductor elements usually adopts the following process, namely, coating the wiring material such as the metal film constituting the conductive wiring material and the interlayer insulating film material for the purpose of insulating between the wirings. After applying a resist film and forming it into a set resist pattern by a photo-etching process, dry etching the resist film as a mask to remove the remaining resist film as a method for removing the resist film The process is generally...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42H01L21/304C11D7/08C11D7/26C11D7/32C11D7/34C11D7/50C11D11/00H01L21/02H01L21/311
CPCC11D7/263C11D7/34C11D7/08C11D7/3263C11D11/0047G03F7/425H01L21/31133C11D7/5009C11D7/5013H01L21/02063H01L21/31116G03F7/423C11D2111/22H01L21/76814
Inventor 菅野至浅冈保宏东雅彦日高义晴岸尾悦郎青山哲男铃木智子平贺敏隆永井俊彦
Owner RENESAS ELECTRONICS CORP