Method for processing porous membrane
A treatment method and porous membrane technology, which can be used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as the impact of semiconductor device performance
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no. 1 example
[0016] A silicide film with a thickness of 50 Å (Angstrom) to 1000 Å is deposited on the porous film after dual damascene patterning and etching by plasma treatment to seal the exposed pores of 8 nm to 25 nm.
[0017] The conditions for plasma treatment are:
[0018] The gas in the reaction chamber is SiH 4 / N 2 O / N 2 / He / O 2 / Ar,
[0019] The heating temperature of the substrate is 200°C to 400°C,
[0020] The applied radio frequency (RF) power is 50W to 200W.
[0021] Form a silicide film with a film thickness of 50 Ȧ (Angstrom) to 1000 Ȧ, for example, a silicon dioxide film (SiO 2 ), or SiON film, or SiN film.
[0022] Subsequently, on the formed silicide film, tantalum (Ta) / tantalum nitride (TAN) and copper (Cu) films constituting interconnect lines are sequentially formed.
[0023] If the cleaning process is performed after the dual damascene patterning and etching have been performed, if the cleaning process is performed by wet etching, the process of adding a si...
no. 2 example
[0025] A silicide film with a film thickness of 50 Å (Angstrom) to 1000 Å is deposited on the porous film after dual damascene patterning and etching by plasma treatment to seal the exposed pores with a diameter of 8 nm to 25 nm.
[0026] The conditions for plasma treatment are:
[0027] The gas in the reaction chamber is SiH 4 / N 2 O / N 2 / He / O 2 / Ar,
[0028] The heating temperature of the substrate is 200°C to 400°C,
[0029] The applied radio frequency (RF) power is 50W to 200W.
[0030] A silicide film, such as a silicon dioxide film (SiO 2 ), or SiON film, or SiN film.
[0031] Subsequently, on the formed silicide film, tantalum (Ta) / tantalum nitride (TAN) and copper (Cu) films constituting interconnect lines are sequentially formed.
[0032] This embodiment is basically the same as the first embodiment, except that the reaction gas in the reaction chamber uses SiN 4 Instead of SiH used in the first embodiment 4 .
[0033] If the cleaning process is performed a...
no. 3 example
[0035] A silicide film with a film thickness of 50 Å (Angstrom) to 1000 Å is deposited on the porous film after dual damascene patterning and etching by plasma treatment to seal the exposed pores with a diameter of 8 nm to 25 nm.
[0036] The conditions for plasma treatment are:
[0037] The gas in the reaction chamber is SiH 4 / N 2 O / N 2 / He / O 2 / Ar,
[0038] The heating temperature of the substrate is 200°C to 400°C,
[0039] The applied radio frequency (RF) power is 50W to 200W.
[0040] Form a silicide film with a film thickness of 50 Ȧ (Angstrom) to 1000 Ȧ, for example, a silicon dioxide film (SiO 2 ), or SiON film, or SiN film.
[0041] Subsequently, on the formed silicide film, tantalum (Ta) / tantalum nitride (TaN) and copper (Cu) films constituting interconnect lines are sequentially formed.
[0042] This embodiment is basically the same as the first embodiment, except that the reaction gas in the reaction chamber uses the SiH used in the first embodiment of OMC...
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