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Method for making cathode structure of field emitting display

A technology of cathode structure and manufacturing method, which is applied in the direction of electroluminescence light source, lighting device, light source, etc., can solve the problems of uneven electric field effect, uneven current density of electron beam, difficult to compact structure, etc., and achieve uniformity of brightness , Improve the uniformity of the electric field and reduce the production accuracy

Inactive Publication Date: 2008-05-28
TECO NANOTECH CO LTD
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Problems solved by technology

[0007] 1. Cause the light scattering phenomenon in the lithography exposure process and affect the photoresist production structure
[0008] 2. The structure stack of three or more poles is uneven, and the electric field effect per unit area is uneven, which affects the uneven current density generated by the emitted electron beams, thereby affecting the effect of the display components.
[0009] 3. If figure 1 Although the structure of the electron emission source shown has provided a relatively flat surface of the electron emission source, the carbon nanotube material of the electron emission source is made by a stacked deposition method, and the structure is difficult to be compact and firm, and there is still a very small amount of Loose carbon tubes fall and fly out

Method used

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  • Method for making cathode structure of field emitting display
  • Method for making cathode structure of field emitting display
  • Method for making cathode structure of field emitting display

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Embodiment Construction

[0026] Relevant technical content and detailed description of the present invention, now cooperate accompanying drawing to explain as follows:

[0027] figure 2 , image 3 It is a schematic diagram of the fabrication process and a schematic diagram of the cathode structure of the cathode structure of the field emission display of the present invention. Such as figure 2 , image 3 As shown, the method for manufacturing the cathode structure of the field emission display of the present invention is mainly to use grinding technology to level the surface of the electrode layer of the cathode structure after the cathode structure of the field emission display is manufactured, so that the surface flatness of the electrode layer is improved, and It is easier to make and can reduce the production cost.

[0028] When making the cathode structure, take a substrate 1 first, and the substrate 1 is made of glass material;

[0029] The first electrode layer 11 and the second electrod...

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Abstract

This invention relates to a cathode structure process method for a field emit display, which forms a first and second electrode layers on a base plate made of silver ink and nm carbon tube material applying thick film technology and sinters the silver ink, after that, the silver ink and the first, second electrode layer surfaces are ground, the thickness error after grinding can be controlled at less than 0.1mum and the flatness of the first and second electrode surfaces is increased.

Description

technical field [0001] The invention relates to a cathode structure manufacturing method of a field emission display, in particular to a method for manufacturing a cathode structure using grinding technology, which can use low-cost ink materials, and at the same time improve the flatness of the electrode layer and the surface of the electron emission source, so that the electrode layer and The fabrication of the electron emission source layer is simpler, and is more beneficial to the fabrication method of the cathode structure of the field emission display which is produced with the subsequent stacked layer structure. Background technique [0002] The known manufacturing technology of cathode electrode layer and electron emission source of Field Emission Display (Field Emission Display, FED) is usually manufactured by thin film process or thick film process. Among them, the thin-film process technology has higher production specification flatness and fine specification, but ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B33/10H05B33/26H05B33/22
Inventor 许瑞庭郑奎文萧俊彦
Owner TECO NANOTECH CO LTD
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